{"id":111,"date":"2021-05-19T09:33:09","date_gmt":"2021-05-19T09:33:09","guid":{"rendered":"https:\/\/centres.uohyd.ac.in\/casest\/?page_id=111"},"modified":"2022-10-11T07:26:41","modified_gmt":"2022-10-11T07:26:41","slug":"m-tech-ict","status":"publish","type":"page","link":"https:\/\/centres.uohyd.ac.in\/casest\/m-tech-ict\/","title":{"rendered":"M.tech (ICT)"},"content":{"rendered":"

[et_pb_section fb_built=”1″ fullwidth=”on” _builder_version=”4.16″ global_colors_info=”{}”][et_pb_fullwidth_header title=”M.tech (ICT)” background_overlay_color=”rgba(11,188,168,0.76)” admin_label=”M.tech (ICT)” _builder_version=”4.16″ title_font=”Trebuchet|700|||||||” content_font_size=”16px” background_image=”https:\/\/centres.uohyd.ac.in\/casest\/wp-content\/uploads\/sites\/10\/2021\/05\/spring-BW.jpg” parallax=”on” filter_saturate=”99%” filter_contrast=”99%” child_filter_saturate=”0%” child_filter_contrast=”113%” z_index_tablet=”500″ title_text_shadow_horizontal_length_tablet=”0px” title_text_shadow_vertical_length_tablet=”0px” title_text_shadow_blur_strength_tablet=”1px” content_text_shadow_horizontal_length_tablet=”0px” content_text_shadow_vertical_length_tablet=”0px” content_text_shadow_blur_strength_tablet=”1px” subhead_text_shadow_horizontal_length_tablet=”0px” subhead_text_shadow_vertical_length_tablet=”0px” subhead_text_shadow_blur_strength_tablet=”1px” content_link_text_shadow_horizontal_length_tablet=”0px” content_link_text_shadow_vertical_length_tablet=”0px” content_link_text_shadow_blur_strength_tablet=”1px” content_ul_text_shadow_horizontal_length_tablet=”0px” content_ul_text_shadow_vertical_length_tablet=”0px” content_ul_text_shadow_blur_strength_tablet=”1px” content_ol_text_shadow_horizontal_length_tablet=”0px” content_ol_text_shadow_vertical_length_tablet=”0px” content_ol_text_shadow_blur_strength_tablet=”1px” content_quote_text_shadow_horizontal_length_tablet=”0px” content_quote_text_shadow_vertical_length_tablet=”0px” content_quote_text_shadow_blur_strength_tablet=”1px” button_one_text_shadow_horizontal_length_tablet=”0px” button_one_text_shadow_vertical_length_tablet=”0px” button_one_text_shadow_blur_strength_tablet=”1px” button_two_text_shadow_horizontal_length_tablet=”0px” button_two_text_shadow_vertical_length_tablet=”0px” button_two_text_shadow_blur_strength_tablet=”1px” box_shadow_horizontal_tablet=”0px” box_shadow_vertical_tablet=”0px” box_shadow_blur_tablet=”40px” box_shadow_spread_tablet=”0px” box_shadow_horizontal_image_tablet=”0px” box_shadow_vertical_image_tablet=”0px” box_shadow_blur_image_tablet=”40px” box_shadow_spread_image_tablet=”0px” box_shadow_horizontal_button_one_tablet=”0px” box_shadow_vertical_button_one_tablet=”0px” box_shadow_blur_button_one_tablet=”40px” box_shadow_spread_button_one_tablet=”0px” box_shadow_horizontal_button_two_tablet=”0px” box_shadow_vertical_button_two_tablet=”0px” box_shadow_blur_button_two_tablet=”40px” box_shadow_spread_button_two_tablet=”0px” text_shadow_horizontal_length_tablet=”0px” text_shadow_vertical_length_tablet=”0px” text_shadow_blur_strength_tablet=”1px” global_colors_info=”{}”][\/et_pb_fullwidth_header][\/et_pb_section][et_pb_section fb_built=”1″ _builder_version=”4.16″ inner_width_phone=”50px” inner_max_width_tablet=”100px” inner_max_width_phone=”50px” custom_margin=”-30px|||” z_index_tablet=”500″ box_shadow_horizontal_tablet=”0px” box_shadow_vertical_tablet=”0px” box_shadow_blur_tablet=”40px” box_shadow_spread_tablet=”0px” global_colors_info=”{}”][et_pb_row _builder_version=”4.16″ _module_preset=”default” custom_margin=”|auto||126px||” global_colors_info=”{}”][et_pb_column type=”4_4″ _builder_version=”4.16″ _module_preset=”default” global_colors_info=”{}”][et_pb_text _builder_version=”4.17.4″ _module_preset=”default” text_text_color=”#000000″ global_colors_info=”{}”]<\/p>\n

Name of the Centre: Centre for Advanced Studies in Electronics Science and Technology (CASEST)<\/strong><\/p>\n

Vision Statement:<\/strong><\/p>\n

To produce skilled human resources for meeting the emerging needs of the country and to execute research in the cutting areas \u00a0in the domain of Electronics Science and Technology.<\/p>\n

Mission Statements:<\/strong><\/p>\n

MS-1: To emerge as a centre for knowledge generation and skill development in electronics for strategic requirements of the country and sustainable living.<\/p>\n

MS2: To train students with critical thinking, problem solving and self learning skills to make them competent for next generation electronics<\/p>\n

MS-3: \u00a0To undertake research in emerging technologies involving Integrated Circuits: Design, Tapeout, Test and Measurement, materials to \u00a0devices to circuits: Design, Fabrication and Testing, signal processing and system design<\/p>\n

MS-4: \u00a0\u00a0To promote technology transfer and entrepreneurship among the faculty and students.<\/p>\n

Name of the Centre: CASEST<\/strong><\/p>\n

Name of the Academic Program M.Tech (Integrated Circuits Technology)<\/strong><\/p>\n

Program Educational Objectives (PEOs)<\/strong><\/p>\n

PEO-1<\/strong>\u00a0To train students in the current technological topics on Integrated Circuits : design, fabrication and testing<\/p>\n

PEO-2<\/strong>\u00a0To impart comprehensive knowledge in the emerging technological topics on active and passive devices: materials to devices to circuits: Design, fabrication and testing<\/p>\n

PEO-3<\/strong>\u00a0To train students in Device fabrication in class 1000 & class 100 clean room<\/p>\n

PEO-4<\/strong>\u00a0To offer training on full cycle development of Integrated circuits, Device design using Electronic Design Automation (EDA) tool.<\/p>\n

PEO-4<\/strong>\u00a0To train the students in analytical reasoning, experimental skills and attitude to collaborate between inter-disciplinary research groups<\/p>\n

Mapping Program Educational Objectives (PEOs)\u00a0<\/strong>with Mission Statements (MS)<\/strong><\/p>\n\n\n\n\n\n\n\n\n
\u00a0<\/strong><\/td>\nMS-1<\/strong><\/td>\nMS-2<\/strong><\/td>\nMS-3<\/strong><\/td>\nMS-4<\/strong><\/td>\n<\/tr>\n
PEO-1<\/strong><\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
PEO-2<\/strong><\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
PEO-3<\/strong><\/td>\n2<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
PEO-4<\/strong><\/td>\n1<\/td>\n2<\/td>\n2<\/td>\n3<\/td>\n<\/tr>\n
PEO-5<\/strong><\/td>\n2<\/td>\n3<\/td>\n2<\/td>\n2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Note: \u00a0\u20183\u2019 in the box for \u2018high-level\u2019mapping, 2 for \u2018Medium-level\u2019mapping, 1 for \u2018Low-level\u2019 mapping.<\/p>\n

Name of the Centre: CASEST<\/strong><\/p>\n

Name of the Academic Program \u00a0M.Tech (Integrated Circuits Technology)<\/strong><\/p>\n

\u00a0<\/strong>Program Outcomes (POs) <\/strong><\/p>\n

After completion of this M.Tech program, the students will be able to<\/p>\n

PO-1 Develop scientific and engineering knowledge for design, prototype and testing of devices, Integrated Circuits and systems<\/p>\n

PO-2 Collaboration, Teamwork and project management skills<\/p>\n

PO-3 Critical thinking for analysis, problem solving and research<\/p>\n

PO-4 Promote Entrepreneurship and professional ethics<\/p>\n

PO-5 Original thinking, Creativity to solve complex systems and problem formulation<\/p>\n

PO-6 Technical presentation and demonstration skills<\/p>\n

Program Specific Outcomes (PSOs)<\/strong><\/p>\n

(In case of specializations in each academic program, 3 to 4)<\/strong><\/p>\n

PSO-1 \u00a0Design and develop efficient VLSI architectures to implement digital systems, digital signal processing \u00a0algorithms and systems on FPGA\/ASIC<\/p>\n

PSO-2: \u00a0Design of analog, RF, mixed signal IC and systems for communication, signal processing, and biomedical applications leading to IC tapeout, test and measurement.<\/p>\n

PSO-3: Design, simulate, fabricate and test microwave and THz Integrated circuits, MEMS using EDA tool and design concepts.<\/p>\n

PSO-4 Design, \u00a0Simulate, fabricate and characterize \u00a0microelectronic devices<\/p>\n

PSO-5 Identify the gap and limitations in the current IC technology and propose \u00a0solutions.<\/p>\n

Mapping of Program Outcomes (POs) and Program Specific Outcomes (PSOs) with Program Educational Objectives (PEOs)<\/strong><\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u00a0<\/strong><\/td>\nPEO-1<\/strong><\/td>\nPEO-2<\/strong><\/td>\nPEO-3<\/strong><\/td>\nPEO-4<\/strong><\/td>\nPEO-5<\/strong><\/td>\n<\/tr>\n
PO-1<\/strong><\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n2<\/td>\n3<\/td>\n<\/tr>\n
PO-2<\/strong><\/td>\n2<\/td>\n2<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
PO-3<\/strong><\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n1<\/td>\n3<\/td>\n<\/tr>\n
PO-4<\/strong><\/td>\n1<\/td>\n1<\/td>\n2<\/td>\n1<\/td>\n2<\/td>\n<\/tr>\n
PO-5<\/strong><\/td>\n1<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n<\/tr>\n
PO-6<\/strong><\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n<\/tr>\n
PSO-1<\/strong><\/td>\n3<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
PSO-2<\/strong><\/td>\n3<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
PSO-3<\/strong><\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
PSO-4<\/strong><\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n1<\/td>\n<\/tr>\n
PSO-5<\/strong><\/td>\n2<\/td>\n2<\/td>\n3<\/td>\n3<\/td>\n2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Note: \u20183\u2019 in the box for \u2018high-level\u2019 mapping, 2 for \u2018Medium-level\u2019 mapping, 1 for \u2018Low-level\u2019 mapping.<\/p>\n

Course Structure \u2013 M. Tech. (ICT)<\/b><\/strong><\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n
Semester \u00a0I \u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0Total No. of Credits : 24<\/strong><\/td>\n<\/tr>\n
Course No.<\/td>\nTitle of the course<\/td>\nContact Hours<\/td>\nCredits<\/td>\n<\/tr>\n
IC401<\/td>\nSemiconductor Device Physics \u00a0and Modeling<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n
IC402<\/td>\nMicro \u00a0& Nano Fabrication Technology for ICs<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n
IC403<\/td>\nDigital VLSI System Design<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n
IC404<\/td>\nRF and Microwave IC’s<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n
IC405<\/td>\nSemiconductor Processing, Characterization and Simulation Laboratory<\/td>\n6<\/td>\n3<\/td>\n<\/tr>\n
IC406<\/td>\nIC \u00a0Design Laboratory<\/td>\n6<\/td>\n3<\/td>\n<\/tr>\n
IC407<\/td>\nRF and Microwave IC Laboratory<\/td>\n4<\/td>\n2<\/td>\n<\/tr>\n
IC 408<\/td>\nAnalog and Mixed Signal IC Design<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

 <\/p>\n\n\n\n\n\n\n\n\n\n\n\n
Semester II \u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0Total No. of Credits :<\/strong>\u00a0<\/strong>26<\/strong><\/td>\n<\/tr>\n
Course No.<\/td>\nTitle of the course<\/td>\nContact Hours<\/td>\nCredits<\/td>\n<\/tr>\n
IC451<\/td>\nProcess, Device and Circuit Modeling and Analysis<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n
IC452<\/td>\nMEMS and THz Technology<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n
IC453<\/td>\nDigital IC Design<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n
IC454<\/td>\nVLSI Signal Processing<\/td>\n4<\/td>\n4<\/td>\n<\/tr>\n
IC455<\/td>\n\u00a0IC Fabrication Technology Laboratory<\/td>\n8<\/td>\n4<\/td>\n<\/tr>\n
IC456<\/td>\nMEMS Laboratory<\/td>\n4<\/td>\n2<\/td>\n<\/tr>\n
IC457<\/td>\nIC \u00a0Design Laboratory-II<\/td>\n8<\/td>\n4<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

 <\/p>\n\n\n\n\n\n
Semester \u00a0III \u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0Total No. of Credits : 24<\/strong><\/td>\n<\/tr>\n
Course No.<\/td>\nTitle of the course<\/td>\nContact Hours<\/td>\nCredits<\/td>\n<\/tr>\n
IC458<\/td>\nProject Work + Seminar<\/td>\n\u00a0<\/td>\n24<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

 <\/p>\n\n\n\n\n\n
Semester \u00a0IV \u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0Total No. of Credits : 24<\/strong><\/td>\n<\/tr>\n
Course No.<\/td>\nTitle of the course<\/td>\nContact Hours<\/td>\nCredits<\/td>\n<\/tr>\n
IC458<\/td>\nProject Work + Dissertation + Viva<\/td>\nSemester<\/td>\n24<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

 <\/p>\n

Name of the \u00a0Centre :CASEST<\/strong><\/p>\n

Name of the Academic Program \u00a0M.Tech (IC Technology)<\/strong><\/p>\n

Course Code: \u00a0IC401<\/strong>\u00a0Title of the course: Semiconductor Device Physics \u00a0and Modeling<\/strong><\/p>\n

L-T-P: \u00a03+1+0 \u00a0\u00a0 Credits: 4<\/p>\n

Prerequisite Course \/ Knowledge (If any): Nil<\/p>\n

Course Outcomes (COs) <\/strong><\/p>\n

\u00a0<\/strong>After completion of this course successfully, the students will be able to<\/p>\n

CO-1: Discuss advanced physical concepts in Semiconductor Electronics such as carrier and impurity statistics, and hot carriers transport effects.<\/p>\n

CO-2: Analyze electronic model for the charge distribution at a semiconductor interface as a function of the interface conditions<\/p>\n

CO-3: Discuss the operation of several basic semiconductor devices: p-n junctions, metal-semiconductor junctions, Diodes, metal oxide semiconductor field effect transistors (MOSFETs), Complementary MOSFETs (CMOS).<\/p>\n

CO-4 : Apply the concepts related to device physics and modelling to solve problems<\/p>\n

CO 5: \u00a0Design new problems related to device and modelling<\/p>\n

Mapping of Course Outcomes (COs) with Program Outcomes (POs)\u00a0<\/strong>and Program Specific Outcomes (PSOs)\u00a0<\/strong>\u00a0<\/strong><\/p>\n\n\n\n\n\n\n\n\n
\u00a0<\/strong><\/td>\nPO1<\/strong><\/td>\nPO2<\/strong><\/td>\nPO3<\/strong><\/td>\nPO4<\/strong><\/td>\nPO5<\/strong><\/td>\nPO6<\/strong><\/td>\nPSO1<\/strong><\/td>\nPSO2<\/strong><\/td>\nPSO3<\/strong><\/td>\nPSO4<\/strong><\/td>\n\u00a0<\/strong>PSO5<\/strong><\/td>\n<\/tr>\n
CO1<\/strong><\/td>\n2<\/td>\n3<\/td>\n3<\/td>\n1<\/td>\n3<\/td>\n2<\/td>\n3<\/td>\n2<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
CO2<\/strong><\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n1<\/td>\n3<\/td>\n2<\/td>\n3<\/td>\n2<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
CO3<\/strong><\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n1<\/td>\n3<\/td>\n2<\/td>\n3<\/td>\n2<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
CO4<\/strong><\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n2<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n
CO5<\/strong><\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n2<\/td>\n1<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Note: \u20183\u2019 in the box for \u2018High-level\u2019mapping, 2 for \u2018Medium-level\u2019mapping, 1 for \u2018Low\u2019-level\u2019mapping<\/p>\n

Detailed syllabus:<\/strong><\/p>\n

Unit I<\/strong><\/p>\n

Overview of Semiconductor \u00a0Physics- Crystal Structure, Concepts of Band structure, Valence and Conduction bands and Electrons and Holes, Density of States, Carrier statistics, Equilibrium carrier concentrations in intrinsic and doped semi-conductors.<\/p>\n

Carrier mobility and scattering mechanisms recombination \/ lifetime due to various mechanisms, determination of carrier mobilities and life times, photoconductivity.<\/p>\n

Unit II<\/strong><\/p>\n

p-n junctions- Band structures across homogeneous junctions, depletion widths and capacitances of abrupt and linearly graded junctions, current flow through p \u2013n junctions, ideal and practical \u00a0I-V Characteristics, breakdown, heterogeneous junctions<\/p>\n

Unit III<\/strong><\/p>\n

BJTs: \u00a0current through a BJT, current gain and its dependence on various factors, Ebers-Moll and Gummel-Poon Models<\/p>\n

Unit IV<\/strong><\/p>\n

Schottky junctions: Metal Semi-conductor junctions, determination of work-functions and barriers heights, Band structures across junctions, Schottky diode and its I-V Characteristics<\/p>\n

Unit V<\/strong><\/p>\n

Unipolar devices: JFETs, MESFETs, \u00a0MOS structures, Band Structure, CV curves, Strong inversion condition, MOSFET characteristics, depletion and enhancement structures, short-channel and hot-carrier effects, HEMT, HBT<\/p>\n

Books:<\/p>\n

Physics of Semi-conductor Devices- S.M. Sze<\/p>\n

Semi-conductor Devices \u2013 Physics and technology \u00a0– S. M. Sze<\/p>\n

Name of the Centre: CASEST<\/strong><\/p>\n

\u00a0<\/strong>Name of the Academic Program \u00a0M.Tech (IC Technology)<\/strong><\/p>\n

Course Code: \u00a0IC402<\/strong>\u00a0: Title of the course\u00a0:Micro \u00a0& Nano Fabrication Technology for ICs<\/strong><\/p>\n

L-T-P: \u00a03+1+0 \u00a0 Credits: 4<\/p>\n

Prerequisite Course \/ Knowledge (If any): Nil<\/p>\n

Course Outcomes (COs) <\/strong><\/p>\n

\u00a0<\/strong>After completion of this course successfully, the students will be able to<\/p>\n

CO-1: Describe the structure and fabrication process steps for the most popular devices.<\/p>\n

CO-2: \u00a0Identify the technological problems and their resolution in IC fabrication technology.<\/p>\n

CO-3: Distinguish between various processes required for Micro-electronic device fabrication<\/p>\n

CO-4: Design and simulate fabrication process steps for specific devices.<\/p>\n

CO-5: Evaluate different technologies for selecting a suitable one for a specific device.<\/p>\n

Mapping of Course Outcomes (COs) with Program Outcomes (POs) <\/strong>and Program Specific Outcomes (PSOs)<\/strong><\/p>\n\n\n\n\n\n\n\n\n
\u00a0<\/strong><\/td>\nPO1<\/strong><\/td>\nPO2<\/strong><\/td>\nPO3<\/strong><\/td>\nPO4<\/strong><\/td>\nPO5<\/strong><\/td>\nPO6<\/strong><\/td>\nPSO1<\/strong><\/td>\nPSO2<\/strong><\/td>\nPSO3<\/strong><\/td>\nPSO4<\/strong><\/td>\nPSO5<\/strong><\/td>\n<\/tr>\n
CO1<\/strong><\/td>\n3<\/td>\n0<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n1<\/td>\n2<\/td>\n2<\/td>\n3<\/td>\n2<\/td>\n<\/tr>\n
CO2<\/strong><\/td>\n3<\/td>\n1<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n1<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n3<\/td>\n1<\/td>\n<\/tr>\n
CO3<\/strong><\/td>\n3<\/td>\n2<\/td>\n3<\/td>\n3<\/td>\n2<\/td>\n2<\/td>\n1<\/td>\n2<\/td>\n1<\/td>\n3<\/td>\n2<\/td>\n<\/tr>\n
CO4<\/strong><\/td>\n3<\/td>\n2<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n3<\/td>\n2<\/td>\n<\/tr>\n
CO5<\/strong><\/td>\n3<\/td>\n2<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n3<\/td>\n2<\/td>\n2<\/td>\n2<\/td>\n3<\/td>\n3<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

\u00a0<\/strong>Note: \u20183\u2019 in the box for \u2018High-level\u2019 mapping, 2 for \u2018Medium-level\u2019 mapping, 1 for \u2018Low\u2019-level\u2019 mapping<\/p>\n

Detailed Syllabus:<\/strong><\/p>\n

Unit 1 (10 hours):<\/p>\n