{"id":256,"date":"2021-05-31T07:07:56","date_gmt":"2021-05-31T07:07:56","guid":{"rendered":"https:\/\/centres.uohyd.ac.in\/casest\/?page_id=256"},"modified":"2021-05-31T07:17:19","modified_gmt":"2021-05-31T07:17:19","slug":"prof-nageswara-rao-s-v-s","status":"publish","type":"page","link":"https:\/\/centres.uohyd.ac.in\/casest\/prof-nageswara-rao-s-v-s\/","title":{"rendered":"Prof. Nageswara Rao S. V. S."},"content":{"rendered":"

[et_pb_section fb_built=”1″ fullwidth=”on” _builder_version=”3.22″][et_pb_fullwidth_header title=”Prof. Nageswara Rao S. V. S.” background_overlay_color=”rgba(11,188,168,0.76)” admin_label=”Prof. Nageswara Rao S. V. S.” _builder_version=”4.9.4″ title_font=”Trebuchet|700|||||||” content_font_size=”16px” background_image=”https:\/\/centres.uohyd.ac.in\/casest\/wp-content\/uploads\/sites\/10\/2021\/05\/spring-BW.jpg” parallax=”on” vertical_offset_tablet=”0″ horizontal_offset_tablet=”0″ filter_saturate=”99%” filter_contrast=”99%” child_filter_saturate=”0%” child_filter_contrast=”113%” hover_enabled=”0″ z_index_tablet=”500″ title_text_shadow_horizontal_length_tablet=”0px” title_text_shadow_vertical_length_tablet=”0px” title_text_shadow_blur_strength_tablet=”1px” content_text_shadow_horizontal_length_tablet=”0px” content_text_shadow_vertical_length_tablet=”0px” content_text_shadow_blur_strength_tablet=”1px” subhead_text_shadow_horizontal_length_tablet=”0px” subhead_text_shadow_vertical_length_tablet=”0px” subhead_text_shadow_blur_strength_tablet=”1px” content_link_text_shadow_horizontal_length_tablet=”0px” content_link_text_shadow_vertical_length_tablet=”0px” content_link_text_shadow_blur_strength_tablet=”1px” content_ul_text_shadow_horizontal_length_tablet=”0px” content_ul_text_shadow_vertical_length_tablet=”0px” content_ul_text_shadow_blur_strength_tablet=”1px” content_ol_text_shadow_horizontal_length_tablet=”0px” content_ol_text_shadow_vertical_length_tablet=”0px” content_ol_text_shadow_blur_strength_tablet=”1px” content_quote_text_shadow_horizontal_length_tablet=”0px” content_quote_text_shadow_vertical_length_tablet=”0px” content_quote_text_shadow_blur_strength_tablet=”1px” button_one_text_shadow_horizontal_length_tablet=”0px” button_one_text_shadow_vertical_length_tablet=”0px” button_one_text_shadow_blur_strength_tablet=”1px” button_two_text_shadow_horizontal_length_tablet=”0px” button_two_text_shadow_vertical_length_tablet=”0px” button_two_text_shadow_blur_strength_tablet=”1px” box_shadow_horizontal_tablet=”0px” box_shadow_vertical_tablet=”0px” box_shadow_blur_tablet=”40px” box_shadow_spread_tablet=”0px” box_shadow_horizontal_image_tablet=”0px” box_shadow_vertical_image_tablet=”0px” box_shadow_blur_image_tablet=”40px” box_shadow_spread_image_tablet=”0px” box_shadow_horizontal_button_one_tablet=”0px” box_shadow_vertical_button_one_tablet=”0px” box_shadow_blur_button_one_tablet=”40px” box_shadow_spread_button_one_tablet=”0px” box_shadow_horizontal_button_two_tablet=”0px” box_shadow_vertical_button_two_tablet=”0px” box_shadow_blur_button_two_tablet=”40px” box_shadow_spread_button_two_tablet=”0px” text_shadow_horizontal_length_tablet=”0px” text_shadow_vertical_length_tablet=”0px” text_shadow_blur_strength_tablet=”1px” sticky_enabled=”0″][\/et_pb_fullwidth_header][\/et_pb_section][et_pb_section fb_built=”1″ _builder_version=”3.24.1″ inner_width_phone=”50px” inner_max_width_tablet=”100px” inner_max_width_phone=”50px” custom_margin=”-30px|||” z_index_tablet=”500″ box_shadow_horizontal_tablet=”0px” box_shadow_vertical_tablet=”0px” box_shadow_blur_tablet=”40px” box_shadow_spread_tablet=”0px”][et_pb_row _builder_version=”3.25″ background_size=”initial” background_position=”top_left” background_repeat=”repeat”][et_pb_column type=”4_4″ _builder_version=”3.0.47″ custom_padding=”|||” custom_padding__hover=”|||”][et_pb_text _builder_version=”4.9.4″ header_5_text_color=”#030a72″ header_6_text_color=”#030a72″ vertical_offset_tablet=”0″ horizontal_offset_tablet=”0″ hover_enabled=”0″ z_index_tablet=”0″ text_text_shadow_horizontal_length_tablet=”0px” text_text_shadow_vertical_length_tablet=”0px” text_text_shadow_blur_strength_tablet=”1px” link_text_shadow_horizontal_length_tablet=”0px” link_text_shadow_vertical_length_tablet=”0px” link_text_shadow_blur_strength_tablet=”1px” ul_text_shadow_horizontal_length_tablet=”0px” ul_text_shadow_vertical_length_tablet=”0px” ul_text_shadow_blur_strength_tablet=”1px” ol_text_shadow_horizontal_length_tablet=”0px” ol_text_shadow_vertical_length_tablet=”0px” ol_text_shadow_blur_strength_tablet=”1px” quote_text_shadow_horizontal_length_tablet=”0px” quote_text_shadow_vertical_length_tablet=”0px” quote_text_shadow_blur_strength_tablet=”1px” header_text_shadow_horizontal_length_tablet=”0px” header_text_shadow_vertical_length_tablet=”0px” header_text_shadow_blur_strength_tablet=”1px” header_2_text_shadow_horizontal_length_tablet=”0px” header_2_text_shadow_vertical_length_tablet=”0px” header_2_text_shadow_blur_strength_tablet=”1px” header_3_text_shadow_horizontal_length_tablet=”0px” header_3_text_shadow_vertical_length_tablet=”0px” header_3_text_shadow_blur_strength_tablet=”1px” header_4_text_shadow_horizontal_length_tablet=”0px” header_4_text_shadow_vertical_length_tablet=”0px” header_4_text_shadow_blur_strength_tablet=”1px” header_5_text_shadow_horizontal_length_tablet=”0px” header_5_text_shadow_vertical_length_tablet=”0px” header_5_text_shadow_blur_strength_tablet=”1px” header_6_text_shadow_horizontal_length_tablet=”0px” header_6_text_shadow_vertical_length_tablet=”0px” header_6_text_shadow_blur_strength_tablet=”1px” box_shadow_horizontal_tablet=”0px” box_shadow_vertical_tablet=”0px” box_shadow_blur_tablet=”40px” box_shadow_spread_tablet=”0px” sticky_enabled=”0″]<\/p>\n

Contact Addresses<\/strong><\/h4>\n
\n\n\n\n\n\n\n
Office<\/td>\nUniversity of Hyderabad,Gachibowli,Hyderabad,Telangana,500046<\/td>\n<\/tr>\n
Phone (office)<\/td>\n+91 +914023134329<\/td>\n<\/tr>\n
email<\/td>\nsvnsp@uohyd.ac.in<\/td>\n<\/tr>\n
Personal web page<\/td>\nhttps:\/\/scholar.google.co.in\/citations?user=P2ko_TUAAAAJ&hl=en<\/a><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

Qualification<\/strong><\/h4>\n
PhD (University of Hyderabad)<\/div>\n
<\/div>\n
<\/div>\n
<\/div>\n
<\/div>\n
<\/div>\n
<\/div>\n
<\/div>\n
<\/div>\n
<\/div>\n

\u00a0<\/strong><\/h4>\n

Education<\/strong><\/h4>\n
\n

Ph.D<\/em><\/strong>\u00a0Physics, University of Hyderabad, Hyderabad .<\/em><\/span><\/p>\n

Thesis title: Ion Beam Characterization and Engineering of Strain in Semiconductor Multi-Layers.<\/em><\/span><\/p>\n

M.Sc(Tech.)<\/em><\/strong>\u00a0Physics with specialization in Electronics and Space Physics,<\/em>\u00a0JNTUCE Anantapur, Jawaharlal Nehru Technological University, Hyderabad.<\/span><\/p>\n

B.Sc<\/em><\/strong>\u00a0(Mathematics, Physics & Electronics),<\/em>\u00a0<\/span>A.M.A.L. College, Anakapalle, Andhra University, Waltair.<\/span><\/p>\n

<\/span><\/p>\n<\/div>\n

Professional Experience<\/strong><\/h4>\n
\n

Professor\u00a0<\/em><\/strong>(12\/2016 \u2013 to date)<\/em><\/span><\/p>\n

Associate Professor\u00a0<\/em><\/strong>(12\/2013 \u2013 12\/2016)<\/em><\/span><\/p>\n

Reader\u00a0<\/em><\/strong>(12\/2010 \u2013 12\/2013)<\/em><\/span><\/p>\n

CASEST, School of Physics, University of Hyderabad (UH), Central Univ. (PO), Hyderabad 500 046, India<\/span><\/p>\n

(Co-Professor-in-charge:<\/strong>\u00a0Centre for Nanotechnology, UOH,\u00a0Coordinator<\/strong>, PG Dip. in Telecom., CDVL)<\/span><\/p>\n

\u00a0<\/span>Assistant Professor\u00a0<\/em><\/strong>(06\/2007 \u2013 12\/2010)<\/em><\/span><\/p>\n

Department of Physics, Pondicherry University (PU), Pondicherry 605 014, India.<\/span><\/p>\n

Research Associate<\/em><\/strong>\u00a0(06\/2004 \u2013 05\/2007)<\/em><\/span><\/p>\n

Department of Physics and Astronomy, Vanderbilt University, BOX NO. 1807B, Nashville, TN\u201337235, USA\u00a0<\/span><\/p>\n

Dr. K S Krishnan Research Associate\u00a0<\/em><\/strong>(08\/2003 \u2013 05\/2004)<\/em><\/span><\/p>\n

Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai , MP\u2013400 085, India.<\/span><\/p>\n

Senior Research Fellow\u00a0<\/em><\/strong>(01\/2003 \u2013 08\/2003)<\/em><\/span><\/p>\n

School of Physics, University of Hyderabad, Hyderabad, AP\u2013500 046, India.<\/span><\/p>\n

<\/span><\/p>\n<\/div>\n

Research Areas<\/strong><\/h4>\n
\n

Electronic Materials, Nano Materials and Devices: Fabrication, Ion beam studies, Radiation damage and Reliability studies.<\/span><\/p>\n

<\/span><\/p>\n<\/div>\n

Member of Professional Bodies<\/strong><\/h4>\n
\n

1) Elected Fellow, Telangana Academy of Sciences (TAS), India,<\/span><\/p>\n

2) Member Institute of Physics, London,<\/span><\/p>\n

3) EC Member, Ion Beam Society of India and<\/span><\/p>\n

4) Life member IPA, India.<\/span><\/p>\n

5) Member, Special Board of Studies: M.Tech (Electronics), Pondicherry University (2008-10).<\/span><\/p>\n

6) BOS Member, Department of Nuclear Physics, Andhra University (since Mar 2019).<\/span><\/p>\n

7) Member, School Board, School of Engineering Science and Technology (SEST), UoH (since Nov. 2019).<\/span><\/p>\n

<\/span><\/p>\n

<\/span><\/p>\n<\/div>\n

Sponsored \/ Consultancy Projects<\/strong><\/h4>\n
\n

Ongoing:<\/strong><\/span><\/p>\n

    \n
  1. \u201cApplication of Ion Beams to Study and Engineer the Resistive Switching Properties of\u00a0 Transition Metal-oxides\u201d\u00a0UFR Project of IUAC<\/em>, New Delhi,\u00a0~ 10 Lakhs\u00a0<\/em>\u00a0(2018-21)\u00a0[Co-PI: Prof. M. Ghanashyam Krishna]<\/span><\/li>\n<\/ol>\n

    Completed:<\/strong><\/span><\/p>\n

      \n
    1. \u201cSynthesis and Photoluminescence studies of porous silicon for photonics, photovoltaics, and bio-sensing applications\u201d, UPE-II project, University of Hyderabad, India, 3 Lakhs, as PI (2012) [Investigators: S V S Nageswara Rao (PI) and S. Venugopal Rao]<\/span><\/li>\n
    2. A study on the influence of energetic ions on bonded hydrogen in semiconductors,\u00a0UFR Project of IUAC<\/em>, New Delhi,\u00a0~ 5 Lakhs\u00a0<\/em>\u00a0(2008-11) [Investigator: S V S Nageswara Rao (PI)]<\/span><\/li>\n
    3. \u201cNanoparticles\/nanostructures assisted surface enhanced Raman spectroscopy: Detection of oxidative stress in a biological system\u201d\u00a0UPE-II project, University of Hyderabad, India, 10 Lakhs, as PI (2014). [Investigators: S V S Nageswara Rao (PI), S. Venugopal Rao, K.P.M.S.V. Padmasree and Sarada D. Tetali]<\/span><\/li>\n
    4. \u201cEffects of swift heavy ion irradiation on the structural and optical properties of Si nanoparticles and nanostructures prepared by different methods\u201d\u00a0UFR Project of IUAC<\/em>, New Delhi,\u00a0~ 6 Lakhs\u00a0<\/em>\u00a0(2015-18)<\/span><\/li>\n
    5. \u201cCharacterization of defects in semiconductors by Coherent Acoustic Phonon (CAP) spectroscopy and investigation of NV centers in Diamond\u201d, UGC-DAE-CSR-Kalpakkam Node, ~ 7 Lakhs (2015 \u2013 18), [Co-PI: Prof. A. P. Pathak].<\/span><\/li>\n
    6. \u201cIon beam studies of hafnium based high-k dielectric materials for metal oxide semiconductor device applications\u201d, UGC-DAE-CSR-Kolkota Node, ~ 1.5 Lakhs (2015 \u2013 18), [Co-PI: Prof. A. P. Pathak].<\/span><\/li>\n<\/ol>\n<\/div>\n

      Students<\/strong><\/h4>\n
      \n

      I. PhD (Ongoing):<\/p>\n

      A. Electronics Science and Engineering:<\/p>\n

      1) Mr. Nimmala Arun (Thesis submitted)<\/p>\n

      2) Mr. G. Sai Prasad<\/p>\n

      B. Physics<\/p>\n

      1) Mr. K. Vinod Kumar<\/p>\n

      2) Mr. M. Mangababu<\/p>\n

      3) Mr. Ravi Kanaka<\/p>\n

      II) Project Assistants:<\/p>\n

      1) Mr. Arup K R.<\/p>\n

      III) PhD (Completed):<\/p>\n

      Physics<\/p>\n

      1). Dr. V.S.\u00a0Vendamani<\/p>\n

      2) Dr. N. Manikantha Babu<\/p>\n

      3) Dr. M. Dhanunjaya<\/p>\n

        <\/ol>\n<\/div>\n

        Publications and Patents<\/strong><\/p>\n

        \n

        Articles in Refereed Journals:<\/em><\/strong><\/span><\/p>\n

          \n
        1. \u201cEffects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices\u201d, N. Arun, L. D. Varma Sangani, K. Vinod Kumar, A. Mangababu, M. Ghanashyam Krishna, A. P. Pathak, and\u00a0S. V. S. Nageswara Rao<\/strong>,\u00a0J. Mater Sci: Mater Electron<\/em><\/strong>, (In press<\/strong>)\u00a0<\/span>(https:\/\/doi.org\/10.1007\/s10854-020-05049-0)<\/span>\u00a0<\/li>\n<\/ol>\n
            \n
          1. \u201cRobust and cost-effective silver dendritic nanostructures for SERS-based trace detection of RDX and ammonium nitrate\u201d, V. S. Vendamani,\u00a0S. V. S. Nageswara Rao<\/strong>, A. P. Pathak and Venugopal Rao Soma,\u00a0RSC Adv.,<\/em><\/strong>\u00a010<\/strong>, 44747 (2020). (DOI: 10.1039\/d0ra08834j)<\/span>\u00a0<\/li>\n<\/ol>\n
              \n
            1. \u201cEffects of Initial Grain Size and Laser Parameters on HfO2<\/sub>\u00a0Nanoparticles Prepared Using Femtosecond Laser Ablation in Liquids\u201d, A. Mangababu, Ch. Sianglam, B. Chandu, D. K. Avasthi, S. Venugopal Rao, M. Motapothula and S.V.S. Nageswara Rao,\u00a0J. of Electronic Materials<\/em><\/strong>\u00a0(in press<\/strong>) (https:\/\/doi.org\/10.1007\/s11664-020-08610-z<\/a>)\u00a0\u00a0<\/span><\/li>\n<\/ol>\n
                \n
              1. \u201cAr Ion Irradiation Effects on the Characteristics of Ru| Pt| n-GaN Schottky Barrier Diodes\u201d, S Kumar, V Kumar Mariswamy, A Kumar, A Kandasami, A Nimmala,\u00a0SVS Nageswara Rao<\/strong>, V Rajagopal Reddy, K Sannathammegowda,\u00a0Semiconductors<\/em>\u00a054,\u00a0<\/strong>1641 (2020)<\/span>\u00a0<\/li>\n<\/ol>\n
                  \n
                1. \u201cNanosecond pulsed laser ablation of Al\u2013Cu\u2013Fe quasicrystalline material: Effects of solvent and fluence\u201d, R Rawat, A Tiwari, N Arun,\u00a0SVS Nageswara Rao<\/strong>, AP Pathak, Yagnesh Shadangi, NK Mukhopadhyay, S Venugopal Rao, A Tripathi,\u00a0J. of Alloys and Compounds,\u00a0<\/em><\/strong>157871 (2020),\u00a0<\/span>\u00a0https:\/\/doi.org\/10.1016\/j.jallcom.2020.157871<\/a><\/span>\u00a0<\/li>\n<\/ol>\n
                    \n
                  1. \u201cStructural investigations of picosecond laser ablated GaAs nanoparticles in different liquids\u201d, A. Mangababu, G. Sarang Dev, B. Chandu, M.S.S. Bharati, S. Venugopal Rao and\u00a0S.V.S. Nageswara Rao<\/strong>,\u00a0Nano-Structures & Nano-Objects<\/em><\/strong>\u00a023<\/strong>, 100509 (2020),\u00a0https:\/\/doi.org\/10.1016\/j.nanoso.2020.100509<\/a>.<\/span>\u00a0<\/li>\n<\/ol>\n
                      \n
                    1. \u201cSynthesis of CuO hollow nanoparticles using laser ablation: effect of fluence and solvents\u201d, Rajesh Rawat, Archana Tiwari, Nimmala Arun,\u00a0SVS Nageswara Rao<\/strong>, AP Pathak, S Venugopal Rao, Ajay Tripathi,\u00a0Appl. Phys. A<\/em><\/strong>\u00a0126<\/strong>, 226 (2020). https:\/\/doi.org\/10.1007\/s00339-020-3403-1.<\/span>\u00a0<\/li>\n<\/ol>\n
                        \n
                      1. \u201cRadiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al\/HfO 2\/Si nMOSCAPs\u201d, N Manikanthababu, T Basu, S Vajandar,\u00a0SVS Nageswara Rao<\/strong>, BK Panigrahi, T Osipowicz, AP Pathak,\u00a0J Mater Sci: Mater Electron<\/em><\/strong>\u00a031<\/strong>, 3312\u20133322 (2020).\u00a0https:\/\/doi.org\/10.1007\/s10854-020-02879-w<\/a> .<\/span>\u00a0<\/li>\n<\/ol>\n
                          \n
                        1. \u201cMedium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni\/Pd\/n-GaN Schottky Barrier Diodes\u201d, Santosh Kumar, Xiang Zhang , V K Mariswamy, V Rajagopal Reddy, Asokan Kandasami, Arun Nimmala,\u00a0S V S Nageswara Rao<\/strong>, Jue Tang, S Ramakrishnna and Krishnaveni S,\u00a0MDPI\u00a0Materials<\/em><\/strong>\u00a013<\/strong><\/em>(6), 1299 (\u00a0<\/em>2020<\/strong>);\u00a0https:\/\/doi.org\/10.3390\/ma13061299<\/a>.<\/span>\u00a0<\/li>\n<\/ol>\n
                            \n
                          1. \u201c120 MeV Ag Ion irradiation induced intermixing, grain fragmentation in HfO2\/GaOx thin films and consequent effects on electrical properties of HfO2\/GaOx\/Si based MOS capacitors\u201d,\u00a0 K. Vinod Kumar, N. Arun, A. Mangababu, Sunil Ojha,\u00a0S.V.S. Nageswara<\/strong>\u00a0Rao<\/strong>\u00a0and\u00a0 A.P. Pathak,\u00a0Rad. Eff. and Def. in Solids<\/em>\u00a0<\/strong>(In press \u2013\u00a0<\/strong>Jan. 2020).<\/span>\u00a0<\/li>\n<\/ol>\n
                              \n
                            1. \u201cSolvents Effect on the Morphology and Stability of Cu\/CuO Nanoparticles Synthesized at High Fluence Laser Ablation\u201d, R Rawat, A Tiwari, N Arun,\u00a0S.V.S. Nageswara Rao,<\/strong>\u00a0AP Pathak and A Tripathi,\u00a0Chemistry Select<\/em><\/strong>\u00a04<\/strong>\u00a0(35), 10471-10482 (2019).<\/span>\u00a0<\/li>\n<\/ol>\n
                                \n
                              1. \u201cEffects of ion irradiation on the structural and electrical properties of HfO2\/SiON\/Si p-metal oxide semiconductor capacitors\u201d, N Manikanthababu, V Saikiran, T Basu, K Prajna, S Vajandar, AP Pathak, BK Panigrahi, T Osipowicz and\u00a0S.V.S. Nageswara Rao<\/strong>,\u00a0Thin Solid Films<\/em><\/strong>\u00a0682<\/strong>, 156-162 (2019)<\/span>\u00a0<\/li>\n<\/ol>\n
                                  \n
                                1. \u201cSwift heavy ion irradiation assisted Si nanoparticle formation in HfSiOx nano-composite thin films deposited by RF magnetron sputtering method\u201d, M Dhanunjaya, KV Kumar, N Manikanthababu,\u00a0S.V.S. Nageswara Rao<\/strong>\u00a0and AP Pathak,\u00a0Nucl. Instr. Meth. B<\/em><\/strong>\u00a0446<\/strong>, 37 (2019)<\/span>\u00a0<\/li>\n<\/ol>\n
                                    \n
                                  1. \u201cInfluence of the bottom metal electrode and gamma irradiation effects on the performance of HfO2-based RRAM devices\u201d, N Arun, K Vinod Kumar, A Mangababu,\u00a0S.V.S. Nageswara Rao<\/strong>\u00a0and AP Pathak,\u00a0Rad. Eff. and Def. in Solids<\/em><\/strong>\u00a0174<\/strong> (1-2), 66-75 (2019)<\/span>\u00a0<\/li>\n<\/ol>\n
                                      \n
                                    1. \u201cHafnium oxide nanoparticles fabricated by femtosecond laser ablation in water\u201d M Dhanunjaya, C Byram, VS Vendamani, SV Rao, AP Pathak and\u00a0S.V.S. Nageswara Rao<\/strong>,\u00a0Applied Physics A<\/em><\/strong>\u00a0125<\/strong> (1), 74(2019).<\/span>\u00a0<\/li>\n<\/ol>\n
                                        \n
                                      1. \u201cFemtosecond Laser-Induced, Nanoparticle-Embedded Periodic Surface Structures on Crystalline Silicon for Reproducible and Multi-utility SERS Platforms\u201d, S Hamad, SS Bharati Moram, B Yendeti, G Krishna Podagatlapalli,\u00a0S.V.S. Nageswara Rao,<\/strong>\u00a0Anand Prakash Pathak, Mahamad Ahamad Mohiddon and Venugopal Rao Soma,\u00a0ACS Omega<\/em><\/strong>\u00a03<\/strong> (12), 18420-18432 (2018)<\/span>\u00a0<\/li>\n<\/ol>\n
                                          \n
                                        1. \u201cCommentary Three-Dimensional Hybrid Silicon Nanostructures for Surface Enhanced Raman Spectroscopy based Molecular Detection\u201d, V. S. Vendamani,\u00a0S. V. S. Nageswara Rao<\/strong>, S. Venugopal Rao, D. Kanjilal and A. P. Pathak,\u00a0J Phys Astron.\u00a0<\/em>6(2)<\/strong> 150 (2018, in press) [SSN (Print) 2320\u20136756, ISSN (Online) 2320-6764].<\/span>\u00a0<\/li>\n<\/ol>\n
                                            \n
                                          1. \u201cGrain Fragmentation and Phase Transformations in Hafnium Oxide Induced by Swift Heavy Ion Irradiation\u201d, M. Dhanunjaya, D.K. vasthi , A. P. Pathak, S.A. Khan, and\u00a0SVS Nageswara Rao<\/strong>,\u00a0Applied Physics<\/em>\u00a0A 124,<\/strong> 585 (2018).<\/span>\u00a0<\/li>\n<\/ol>\n
                                              \n
                                            1. \u201cElectronic excitation induced defect dynamics in HfO2<\/sub>\u00a0based MOS devices investigated by\u00a0<\/strong>in-situ<\/strong><\/em>\u00a0electrical measurements\u201d,\u00a0<\/strong>N. Manikanthababu, Saumitra Vajandar, N. Arun, A. P. Pathak, Asokan Kandasami, T. Osipowicz, T.\u00a0 Basu and\u00a0S.V.S. Nageswara Rao,<\/strong>\u00a0Appl. Phys. Lett.<\/em><\/strong>\u00a0112,\u00a0<\/strong>131601 (2018)<\/span>\u00a0<\/li>\n<\/ol>\n
                                                \n
                                              1. \u201cHafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance\u201d, N Arun, K.V. Kumar, A. P. Pathak, D.K. Avasthi,\u00a0S. V. S. Nageswara Rao<\/strong>,\u00a0Rad. Eff. and Def. in Solids<\/em><\/strong>\u00a0173,\u00a0<\/strong>239 (2018)<\/span>\u00a0<\/li>\n<\/ol>\n
                                                  \n
                                                1. \u201cThree-Dimensional Hybrid Silicon Nanostructures for Surface Enhanced Raman Spectroscopy based Molecular Detection.\u201d, V. S. Vendamani,\u00a0S. V. S. Nageswara Rao<\/strong>, S. Venugopal Rao, D. Kanjilal and A. P. Pathak,\u00a0J. Appl. Phys.<\/em><\/strong>\u00a0123<\/strong>, 014301 (2018).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                    \n
                                                  1. \u201cIon induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering\u201d, M Dhanunjaya, SA Khan, AP Pathak, DK Avasthi,\u00a0S V S Nageswara Rao<\/strong>,\u00a0J. of Phys.<\/em><\/strong>\u00a0D (Appl. Phys.)<\/strong>,\u00a050<\/strong>, 505301(2017).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                      \n
                                                    1. \u201cEnergetic ion induced desorption of hydrogen from porous silicon studied by on-line elastic recoil detection analysis\u201d, VS Vendamani, Saif A Khan, M Dhanunjaya, AP Pathak,\u00a0SVS Nageswara Rao,\u00a0Microporous and Mesoporous Materials,\u00a0<\/em>246,\u00a0<\/em><\/strong>81 (2017).<\/em><\/span>\u00a0<\/li>\n<\/ol>\n
                                                        \n
                                                      1. \u201cIon induced intermixing and consequent effects on the leakage currents in HfO2\/SiO2\/Si systems\u201d, N Manikanthababu, TK Chan, S Vajandar, V Saikiran, AP Pathak, T Osipowicz,\u00a0SVS Nageswara Rao<\/strong>,\u00a0Applied Physics<\/em>\u00a0A<\/strong>,\u00a0123<\/strong>, 303 (2017). <\/span>\u00a0<\/li>\n<\/ol>\n
                                                          \n
                                                        1. \u201cGamma irradiation-induced effects on the electrical properties of HfO2<\/sub>\u00a0\u2013 based MOS devices\u201d, N Manikanthababu, N Arun, M Dhanunjaya,\u00a0SVS Nageswara Rao<\/strong>, AP Pathak,\u00a0Rad. Eff. and Def. in Solids<\/em><\/strong>,\u00a0171<\/strong>, 77 (2016)<\/span>\u00a0<\/li>\n<\/ol>\n
                                                            \n
                                                          1. \u201cSynthesis and characterization of Ge nanocrystals embedded in high-k dielectric (HfO2) matrix\u201d, V. Saikiran, N. Manikantha Babu, N. Srinivasa Rao,\u00a0S. V. S. Nageswara Rao<\/strong>\u00a0and A. P. Pathak,\u00a0Adv. Mater. Lett<\/em><\/strong>.,<\/em>\u00a07<\/strong>(8), 100-150 (2016).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                              \n
                                                            1. \u201cDepth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons\u201d, Andrey Baydin, Halina Krzyzanowska, Munthala Dhanunjaya,\u00a0S V S Nageswara Rao<\/strong>, Jimmy L Davidson, Leonard C Feldman, Norman H Tolk,\u00a0APL Photonics<\/em><\/strong>\u00a01<\/strong>, 036102 (2016).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                \n
                                                              1. \u201cSHI induced effects on the electrical and optical properties of HfO 2 thin films deposited by RF sputtering\u201d, N Manikanthababu, M Dhanunjaya,\u00a0S V S Nageswara Rao<\/strong>\u00a0and AP Pathak,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B, 379,\u00a0<\/strong>230 (2016).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                  \n
                                                                1. \u201cStudies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation\u201d S Hamad, GK Podagatlapalli, R Mounika,\u00a0S V S Nageswara Rao<\/strong>, AP Pathak, SV Rao,\u00a0AIP Advances\u00a0<\/em>5\u00a0<\/em><\/strong>(12), 127127 (2015)<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                    \n
                                                                  1. \u201cBlue Luminescent Silicon Nanoparticles Synthesized From Free-Standing Porous Silicon Layer by Ultrasonic Treatment\u201d,\u00a0 V.S. Vendamani, A.P. Pathak and\u00a0S.V.S. Nageswara Rao<\/em><\/strong>,\u00a0Optical Materials<\/em><\/strong>,\u00a048<\/strong>, 66 (2015).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                      \n
                                                                    1. “Fabrication of porous silicon based tunable distributed Bragg reflectors by anodic etching of irradiated silicon”, V.S. Vendamani, Z.Y. Dang, P. Ramana, A.P. Pathak, V.V. Ravi Kanth Kumar, M.B.H. Breese and\u00a0S.V.S. Nageswara Rao<\/em><\/strong>,\u00a0Nucl. Instr. Meth. B<\/em><\/strong>\u00a0358<\/strong>, 105 (2015);\u00a0doi:10.1016\/j.nimb.2015.05.040<\/a><\/span>\u00a0<\/li>\n<\/ol>\n
                                                                        \n
                                                                      1. \u201cSynthesis of ultra-small silicon nanoparticles by femtosecond laser ablation of porous silicon\u201d V. S. Vendamani,\u00a0 Syed Hamad, V. Saikiran,\u00a0 A. P. Pathak, S. Venugopal Rao, V. V. Ravi Kanth Kumar and\u00a0S. V. S. Nageswara Rao<\/em><\/strong>,\u00a0J. Mate. Sci.<\/em><\/strong>\u00a050<\/strong>, 1666 (2015).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                          \n
                                                                        1. \u201cSynthesis, characterization and radiation damage studies of high-k dielectric (HfO2) films for MOS device applications\u201d, N. Manikanthababu, N. Arun, M. Dhanunjaya, V. Saikiran, S. V. S. Nageswara Rao and A. P. Pathak,\u00a0Rad. Eff. and Def. in Solids<\/em><\/strong>,\u00a0<\/em>170<\/strong>,<\/em>\u00a0207 (2015).\u00a0<\/em>DOI:<\/strong> 10.1080\/10420150.2014.980259<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                            \n
                                                                          1. \u201cOne Dimensional Silicon Nanostructures Prepared by Oxidized Porous Silicon under Heat Treatment\u201d, V.S. Vendamani, Anand P Pathak and\u00a0S V S Nageswara Rao<\/em><\/strong>,\u00a0Appl. Surf. Sci<\/em><\/strong>., 320<\/strong>, 334 (2014).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                              \n
                                                                            1. \u201c150 MeV Au ion induced modification of Si nanoparticles prepared by laser ablation\u201d, V. Saikiran, V. S. Vendamani, S. Hamad,\u00a0S. V. S. Nageswara Rao<\/strong>, S. Venugopal Rao and A. P. Pathak,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 333,\u00a0<\/strong>99 (2014)<\/span>\u00a0\u00a0<\/strong><\/li>\n<\/ol>\n
                                                                                \n
                                                                              1. “Femtosecond Ablation of Silicon in Acetone: Tunable Photoluminescence from Generated Nanoparticles and Fabrication of Surface Nanostructures”, S.\u00a0Hamad, P. G. Krishna, V. S. Vendamani,\u00a0S. V. S. Nageswara Rao<\/strong>, A. P. Pathak, S. P. Tewari, S. Venugopal Rao,\u00a0J. Phys. Chem.<\/em><\/strong>\u00a0C 118<\/strong>, 7139 (2014)<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                  \n
                                                                                1. \u201cIon beam studies of Hafnium based alternate high-k dielectric films deposited on silicon\u201d, N. Manikanthababu, T. K. Chan, A.P. Pathak, G. Devaraju, N Srinivasa Rao, P. Yang, M. B. H. Breese, T. Osipowicz and\u00a0S.V.S. Nageswara Rao<\/strong>,\u00a0Nucl. Instr. Meth.\u00a0<\/em><\/strong>B 332,\u00a0<\/strong>389\u00a0<\/strong>(2014)<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                    \n
                                                                                  1. \u201cStructural and Optical properties of Porous Silicon prepared by anodic etching of Irradiated Silicon\u201d, V S Vendamani, Anand P Pathak and\u00a0S V S Nageswara Rao,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 315<\/strong>, 188 (2013).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                      \n
                                                                                    1. \u201cMeasurement of L X-Ray production cross-sections of Au, Ho, Bi and K X-Ray cross-sections of Nb, Sn, Sb by using protons of energy 4 MeV\u201d, Daisy Joseph,\u00a0S V S Nageswara Rao<\/em><\/strong>\u00a0and<\/em>\u00a0S Kailas,\u00a0\u00a0Mapana J Sci.,\u00a0<\/em>12,\u00a0<\/strong>1, 2013 (ISSN 0975-3303).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                        \n
                                                                                      1. \u201cSynthesis and tailoring of GaN nanocrystals at room temperature by RF magnetron sputtering\u201d, G Devaraju, AP Pathak, N Srinivasa Rao, V Saikiran,\u00a0SVS Nageswara Rao<\/strong>, AI Titov, Rad. Eff. and Def. in Solids, 167, 659 (2012)<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                          \n
                                                                                        1. \u201cAnharmonic effects on Positron Channeling Angular scans and Dechanneling due to Stackingfaults and Platelets\u201d, V S Vendamani, S. Balamuragan, V Saikiran, A P Pathak\u00a0<\/sup>and\u00a0<\/sub>S V S Nageswara Rao<\/em><\/strong>,\u00a0\u00a0Rad. Eff. and Def. in Solids<\/em><\/strong>,\u00a0167<\/strong>, 594 (2012).<\/em><\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                            \n
                                                                                          1. \u201cIon beam-mixing effects in nearly lattice-matched AlInN\/GaN heterostructures by swift heavy ion irradiation\u201d, G Devaraju,\u00a0SVS Nageswara Rao<\/strong>, N Srinivasa Rao, V Saikiran, TK Chan, T Osipowicz, MBH Breese, AP Pathak,\u00a0Rad. Eff. and Def. in Solids,<\/em><\/strong>\u00a0167<\/strong>, 506 ( 2012)<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                              \n
                                                                                            1. \u201cReconfiguration and dissociation of bonded hydrogen in silicon by energetic ions\u201d,\u00a0S.V.S. Nageswara Rao<\/strong>, S.K. Dixit, G. L\u00fcpke, N.H. Tolk and L.C. Feldman,\u00a0Phys. Rev.\u00a0<\/em>B 83,\u00a0<\/strong>045204, 2011.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                \n
                                                                                              1. \u201cEnergy dependence relations for channeling critical angle and dechanneling probability due to stacking faults\u201d, V.S. Vendaman and\u00a0S.V.S. Nageswara Rao,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 268,\u00a0<\/strong>2312, 2010.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                  \n
                                                                                                1. \u201cEffect of energetic ions on the stability of bond-center hydrogen in silicon\u201d,\u00a0S.V.S. Nageswara Rao<\/strong>, S.K. Dixit, G. L\u00fcpke, N.H. Tolk and L.C. Feldman,\u00a0 Phys. Rev.<\/em>\u00a0B 75,\u00a0<\/strong>235202,\u00a0<\/strong>\u00a02007.<\/em><\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                    \n
                                                                                                  1. \u201cDopant segregation and giant magnetoresistance in manganese-doped germanium\u201d, A. P. Li, K. von Benthem, K. Varga, M. F. Chisholm,\u00a0S.V.S. Nageswara Rao<\/strong>, S. K. Dixit, L. C. Feldman, A. G. Petukhov, M. Foygel, J. Shen, Zhenyu Zhang and H. H. Weitering.\u00a0Phys. Rev.\u00a0<\/em>B 75,\u00a0<\/em><\/strong>201201(R<\/strong>), 2007.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                      \n
                                                                                                    1. \u201cVibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors\u201d, B. Sun, G. A. Shi,\u00a0S.V.S. Nageswara Rao<\/strong>, M. Stavola, N. H. Tolk, S. K. Dixit, L. C. Feldman and G. Lu\u00a8pke,\u00a0Phys. Rev. Lett.,\u00a0<\/em>96<\/strong>, 035501, 2006.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                        \n
                                                                                                      1. \u201cIon Beam Irradiation and Characterization of GaAs based Heterostructures\u201d, S. Dhamodaran, N. Sathish, A.P. Pathak,\u00a0S.V.S.N. Rao<\/strong>, A.M. Siddiqui, S.A. Khan, D.K. Avasthi, T. Srinivasan, R. Muralidharan, C. Muntele, D. Ila and D. Emfietzoglou,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 242<\/strong>, 538, 2006.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                          \n
                                                                                                        1. Dechanneling of electrons by stacking faults: A model quantum mechanical calculations, S. Dhamodaran, N. Sathish, A.P. Pathak, L.N.S. Prakash Goteti,\u00a0S.V.S. Nageswara Rao<\/strong>, V. Raghav Rao and D. Emfietzoglou,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 230<\/strong>, 100, 2005.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                            \n
                                                                                                          1. \u201cElectronic Sputtering from Semi conducting HOPG: A study of Angular Dependence\u201d, A. Tripathi, S.A. Khan, S.K. Srivastava, M. Kumar, S. Kumar,\u00a0S.V.S.N. Rao<\/strong>, G.B.V.S. Lakshmi, Azhar. M. Siddiqui, N. Bajwa, H.S. Nagaraja, V.K. Mittal, A. Szokefalvi, M. Kurth, A.C. Pandey, D.K. Avasthi and H.D. Carstanjen,\u00a0Nucl. Instr. Meth.<\/em><\/strong>\u00a0B 212<\/strong>, 402, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                              \n
                                                                                                            1. \u201cIon Beam Characterization and Engineering of Strain in Semiconductor Multi-Layers\u201d,\u00a0S.V.S. Nageswara Rao,<\/strong>\u00a0Anand P. Pathak, Azher M. Siddiqui, D.K. Avasthi, Claudiu Muntele, Daryush Ila, B.N. Dev, R. Muralidharan, F. Eichhorn, R. Groetzschel and A. Turos,\u00a0Nucl. Instr. Meth.<\/em><\/strong>\u00a0B 212<\/strong>, 442, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                \n
                                                                                                              1. \u201cDevelopment of a Large Area Two Dimensional Position Sensitive Detector Telescope for Material Analysis\u201d,\u00a0S.V.S. Nageswara Rao<\/strong>, A. Kothari, G.B.V.S. Lakshmi, S.A. Khan, A. Tripathi, Azher M. Siddiqui, Anand P. Pathak and D.K. Avasthi,\u00a0Nucl. Instr. Meth.<\/em><\/strong>\u00a0B 212<\/strong>, 545, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                  \n
                                                                                                                1. \u201cIon Beam Induced Modification of Lattice Strains in In0.1Ga0.9As\/GaAs system\u201d,\u00a0S.V.S. Nageswara Rao<\/strong>, A.K. Rajam, Azher M. Siddiqui, D.K. Avasthi, T. Srinivasan, Umesh Tiwari, S.K. Mehta, R. Muralidharan, R.K. Jain and Anand P. Pathak,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 212<\/strong>, 473, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                    \n
                                                                                                                  1. \u201cThe Effect of Temperature on the behavior of Semiconductor Silicon Surface Barrier detector\u201d,\u00a0Khadke Udaykumar, B.R. Kerur, S.M. Hangodimath, M.T. Lagare, S.K. Srivastava,\u00a0S.V.S. Nageswara Rao<\/strong>, A. Mandal and D.K. Avasthi,\u00a0Radiation Measurement<\/em><\/strong>\u00a036<\/strong>, 625, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                      \n
                                                                                                                    1. \u201cStudy of 200 MeV Ag ion irradiation effects on the oxygen stoichiometry of La-2125 type superconducting thin films using ERDA\u201d,\u00a0K.R. Mavani, S. Rayaprol, D.S. Rana, C.M. Thaker, D.G. Kuberkar, J. John, R. Pinto,\u00a0S.V.S. Nageswara Rao<\/strong>, S.A. Khan, S.K. Srivastava, A. Dogra,\u00a0Ravi Kumar and D.K. Avasthi,\u00a0Radiation Measurement<\/em><\/strong>\u00a036<\/strong>, 733, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                        \n
                                                                                                                      1. \u201cQuantum description for the effects of strained layered superlattices on channeling radiation\u201d,\u00a0S.V.S. Nageswara Rao,\u00a0<\/strong>L.N.S. Prakash Goteti and A.P. Pathak,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 202<\/strong>,<\/em> 312, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                          \n
                                                                                                                        1. \u201cDE\/dx measurements for heavy ions with Z=6-29 in poly corbonate\u201d, A. Sharma, P.K. Diwan, S. Kumar, S.K. Sharma, V.K. Mittal,\u00a0S.V.S. Nageswara Rao<\/strong>, B. Sannakki, S. Ghosh and D.K. Avasthi,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 194<\/strong>, 7, 2002.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                            \n
                                                                                                                          1. \u201cChanneling radiation from relativistic electrons and positrons\u201d,\u00a0S.V.S. Nageswara Rao,\u00a0<\/strong>L.N.S. Prakash Goteti and\u00a0 A.P. Pathak,\u00a0Ind. J. Phys. ,\u00a0<\/em>76B(4)<\/strong>, 443, 2002.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                              \n
                                                                                                                            1. \u201cChanneling radiation from relativistic electrons \u2013 study of stacking faults and dislocations\u201d, A.P. Pathak, L.N.S. Prakash Goteti and\u00a0S.V.S. Nageswara Rao<\/strong>,\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 193<\/strong>,<\/em> 188, 2002.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                \n
                                                                                                                              1. \u201cElectronic sputtering of Fullerene films by swift heavy ions\u201d, S. Ghosh, D.K. Avasthi, A. Tripathi, S.K. Srivastava,\u00a0S.V.S. Nageswara Rao<\/strong>, T. Som, V.K. Mittal, F. Gruner and W. Assmann,\u00a0Nucl. Instr. Meth.<\/em>\u00a0B 190<\/strong>, 169, 2002.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                  \n
                                                                                                                                1. \u201cIon beam studies in strained layer superlattices\u201d, A.P. Pathak,\u00a0S.V.S. Nageswara Rao<\/strong>, A.M. Siddiqui, G.B.V.S. Lakshmi, S.K. Srivastava, S. Ghosh, D. Bhattacharya, D.K. Avasthi, D.K. Goswami, P. Satyam, B.N. Dev and A. Turos,\u00a0Nucl. Insrt. Meth.\u00a0<\/em>B 193<\/strong>, 319, 2002.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                    \n
                                                                                                                                  1. \u201cIon Chnanneling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells\u201d, Azher M. Siddiqui,\u00a0S.V.S. Nageswara Rao<\/strong>, Anand P. Pathak, V. N. Kulkarni, R. Keshav Murthy, Eric Williams, Daryush Ila, Claudiu Muntele, K. S. Chandrasekaran and B. M. Arora,\u00a0\u00a0J. Appl. Phys.\u00a0<\/em>90<\/strong>, 2824, 2001.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                      \n
                                                                                                                                    1. \u201cDefects and Strain studies in semiconductor multilayers\u201d, Anand P. Pathak,\u00a0S.V.S. Nageswara Rao<\/strong>\u00a0and Azher M. Siddiqui,\u00a0\u00a0Nucl. Instr. Meth.\u00a0<\/em>B 161-163<\/strong>, 487, 2000.<\/span><\/li>\n<\/ol>\n

                                                                                                                                       <\/p>\n

                                                                                                                                      Articles \/ Chapters in Refereed Books\/Series\/Volumes:<\/strong><\/span>\u00a0<\/h4>\n

                                                                                                                                       <\/p>\n

                                                                                                                                        \n
                                                                                                                                      1. \u201cSilicon Nanostructures from Bulk and Porous Silicon\u201d , S. Venugopal Rao, G. Krishna Podagatlapalli, V. S. Vendamani, S. Hamad, Anand P. Pathak and\u00a0\u00a0S. V. S. Nageswara Rao<\/strong>,\u00a0Encyclopedia of Nanoscience and Nanotechnology<\/em><\/strong>, Edited by H. S. Nalwa, American Scientific Publishers (in Press, 2016).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                          \n
                                                                                                                                        1. \u201cChanneling Radiation in Strained Layer Superlattice \u2013 A Quantum Mechanical Calculation\u201d, with\u00a0Anand P. Pathak<\/strong>\u00a0et. al., Chapter 35, book:\u00a0Current Developments in Atomic, Molecular and Chamical Physics<\/em><\/strong>, edited by: Man Mohan, Kluwer Publications, Dordrecht, The Netherlands (2003).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                            \n
                                                                                                                                          1. \u201cIon beam irradiation effects on the strain in GaAs\/InGaAs layers\u201d,\u00a0S.V.S. Nageswara Rao<\/strong>\u00a0et al.,\u00a0Physics at Surface and Interface<\/em><\/strong>, Ed. BN Dev, World Scientific (2003) pp 158-170 .<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                              \n
                                                                                                                                            1. \u201cTheory of charged particle probes to modern advanced materials\u201d, with A.P. Pathak et. al.,\u00a0Accelerator Based Research in Basic ad Applied Sciences<\/em><\/strong>, Eds. A Roy and D.K. Avasthi, Phoenix Publishers Delhi (2002), pp 173 \u2013 184<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                \n
                                                                                                                                              1. \u201cQuantum description of the effects of defects on channeling radiation\u201d, with Anand P. pathak et. al.,\u00a0Atomic and Molecular Physics<\/em><\/strong>, Ed. R. Srivastava, Phoenix Delhi (2001), pp 219-228.<\/span>\u00a0<\/li>\n<\/ol>\n

                                                                                                                                                Conference Proceedings:\u00a0<\/strong><\/p>\n

                                                                                                                                                  \n
                                                                                                                                                1. \u201cMetal nanoparticles in dielectric media: Physical vapor deposited HfO2 & Ag multilayers for MOS device and SPR applications\u201d, A Mangababu, N Arun, KV Kumar, AP Pathak, AIP Conference Proceedings 2265 (1), 030271 (2020).\u00a0 <\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                    \n
                                                                                                                                                  1. “Fabrication and Characterization of GaAs Nanoparticles Achieved using Femtosecond Laser Ablation”,\u00a0 A. Mangababu, G. Sarang Dev, B. Chandu, M.S.S. Bharati, P. Debashish, S. Venugopal Rao, and\u00a0S.V.S. Nageswara Rao<\/strong>, Materials Today: Proceedings. (in press, May 2020).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                      \n
                                                                                                                                                    1. \u201cFabrication of HfO2 based MOS and RRAM devices: A study of thermal annealing effects on these devices\u201d, N Arun, J Prabana, K Vinod Kumar, AP Pathak and\u00a0S.V.S. Nageswara Rao<\/strong>, AIP Conference Proceedings 2115, 030216 (2019).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                        \n
                                                                                                                                                      1. \u201cEffects of thermal annealing and gamma irradiation on HfO2 thin films deposited on GaAs\u201d, KV Kumar, N Arun, AP Pathak,\u00a0S.V.S. Nageswara Rao<\/strong>, AIP Conference Proceedings 2115, 030021 (2019).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                          \n
                                                                                                                                                        1. \u201c120 MeV Ag ion induced effects in Au\/HfO2<\/sub>\/Si MOSCAPs\u201d,\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 N Manikanthababu, K Prajna, AP Pathak and\u00a0S. V. S. Nageswara Rao<\/strong>, AIP Conference Proceedings 1953 (1), 100061 (2018).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                            \n
                                                                                                                                                          1. \u201cFormation and local heating effects on the vibrational properties of defects in crystalline silicon\u201d, VS Vendamani, AP Pathak, D Kanjilal, and\u00a0S. V. S. Nageswara Rao<\/strong>, AIP Conference Proceedings 1942 (1), 120010 (2018).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                              \n
                                                                                                                                                            1. \u201cIon induced effects on the dissociation of silicon nanoparticles\u201d, VS Vendamani,\u00a0SVS Nageswara Rao<\/strong>, S Hamad, S Venugopal Rao and AP Pathak, AIP Conf. Proc. 1832, 050020 (2017).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                \n
                                                                                                                                                              1. \u201cEffect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering\u201d, M Dhanunjaya, N Manikanthababu, AP Pathak and\u00a0S V S Nageswara Rao<\/strong>, AIP Conf. Proc. 1731, 080071 (2016).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                  \n
                                                                                                                                                                1. \u201cFemtosecond multiple ablation of Silicon in acetone: Tunable photoluminescence from generated nanoparticles and fabrication of surface nanostructures\u201d, Syed Hamad, G. K. Podagatlapalli, V.S. Vendamani,\u00a0S.V.S. Nageswara Rao<\/strong>, A.P. Pathak, S.P. Tewari, S. Venugopal Rao, Proceedings of National Laser Symposium (NLS-22), Manipal University, Manipal. 8-11 Jan 2014.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                    \n
                                                                                                                                                                  1. \u201cIon Beam studies of semiconductor nanoparticles for the integration of optoelectronic devices\u201d,\u00a0S.V.S. Nageswara Rao<\/strong> et. al. AIP Conf. Series, (Accepted, Oct 2010).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                      \n
                                                                                                                                                                    1. \u201cX-ray production cross-section measurements of As, Ho, Bi, Nb & Sb by protons of energy 4MeV\u201d, with Daisy. Joseph et. al. Solid State Physics (India) Vol. 47, 2004\u00a0 (in press).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                        \n
                                                                                                                                                                      1. \u201cIon beam techniques of modification and study of semiconductor heterostructures\u201d, with A.M. Siddiqui et. al. Proce \u201cInternational Conference on Advances in Surface Treatment: Research & Application\u201d, Eds. TS Sudrashan et. al., Emptek Publishing Chennai (2004), pp 633-641.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                          \n
                                                                                                                                                                        1. \u201cAutomation of Channeling Experiment for Lattice Strain Measurements using High Energy Ion beams\u201d,\u00a0S.V.S. Nageswara Rao<\/strong> et. al. AIP Conf. Series, 680, 94, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                            \n
                                                                                                                                                                          1. \u201cIon Beam studies of Strains\/Defects in Semiconductor Multi layers\u201d, with Anand P. Pathak et. al. AIP Conf. Series, 680, 593, 2003.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                              \n
                                                                                                                                                                            1. \u201cIon Beam Characterization and Engineering of Strain in Semiconductor Multilayers\u201d (Thesis paper for best thesis competition), S.V.S. Nageswara Rao et. al. Solid State Physics (India) Vol 46, 2003 (In Press) [Won IPA\u2019s Best PhD Thesis Presentation Award in Solid State Physics \u2013 2002<\/strong>].<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                                \n
                                                                                                                                                                              1. \u201cExperimental Facilities at the 6MV Folded Tandem Ion Accelerator at Trombay\u201d, with S.K. Gupta et. al, Proc. DAE Nuclear Physics Symposium 2003 (in press).<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                                  \n
                                                                                                                                                                                1. \u201cStrain Measurements of semiconductor multilayers by Ion channeling, High resolution XRD and Raman Spectroscopy\u201d, with\u00a0Azher M. Siddiqui\u00a0<\/strong>et al., AIP Conf. Series, 576, 476, 2001.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                                    \n
                                                                                                                                                                                  1. Swift heavy ion mixing in In0.12Ga0.88As\/GaAs strained layer superlattice, S.V.S. Nageswara Rao et. al., Solid State Physics (India) 44, 227, 2001.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                                      \n
                                                                                                                                                                                    1. Description for the effects of strained layer super lattices on channeling radiation, S.V.S. Nageswara Rao et. al., Solid State Physics (India) 44, 505, 2001.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                                        \n
                                                                                                                                                                                      1. Quantum description of the electron dechanneling by stacking faults, with L.N.S. Prakash Goteti, et. al., Solid State Physics (India) 43, 322, 2000.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                                          \n
                                                                                                                                                                                        1. Electronic sputtering of Fullerene films by swift heavy ion impact, with S. Ghosh et. al., Solid state physics (India) 43, 280, 2000.<\/span>\u00a0<\/li>\n<\/ol>\n
                                                                                                                                                                                            \n
                                                                                                                                                                                          1. \u201cEnergetic ion beams for measurement and modification of strain in strained superlattices\u201d, with D.K. Avasthi et. al., Proceedings of DAE-BRNS workshop on thin films and multilayers, 68-71, oct. 1999.\u00a0\u00a0<\/span><\/li>\n<\/ol>\n<\/div>\n

                                                                                                                                                                                            Awards and Honours<\/strong><\/h4>\n
                                                                                                                                                                                            \n

                                                                                                                                                                                            Best PhD Thesis Presentation Award in Solid-State Physics (2002) of Indian Physics Association.<\/span><\/p>\n<\/div>\n

                                                                                                                                                                                            [\/et_pb_text][\/et_pb_column][\/et_pb_row][\/et_pb_section]<\/p>\n","protected":false},"excerpt":{"rendered":"

                                                                                                                                                                                            Contact Addresses Office University of Hyderabad,Gachibowli,Hyderabad,Telangana,500046 Phone (office) +91 +914023134329 email svnsp@uohyd.ac.in Personal web page https:\/\/scholar.google.co.in\/citations?user=P2ko_TUAAAAJ&hl=en Qualification PhD (University of Hyderabad) \u00a0 Education Ph.D\u00a0Physics, University of Hyderabad, Hyderabad . Thesis title: Ion Beam Characterization and Engineering of Strain in Semiconductor Multi-Layers. M.Sc(Tech.)\u00a0Physics with specialization in Electronics and Space Physics,\u00a0JNTUCE Anantapur, Jawaharlal Nehru Technological University, Hyderabad. […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_et_pb_use_builder":"on","_et_pb_old_content":"","_et_gb_content_width":"","footnotes":""},"_links":{"self":[{"href":"https:\/\/centres.uohyd.ac.in\/casest\/wp-json\/wp\/v2\/pages\/256"}],"collection":[{"href":"https:\/\/centres.uohyd.ac.in\/casest\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/centres.uohyd.ac.in\/casest\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/centres.uohyd.ac.in\/casest\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/centres.uohyd.ac.in\/casest\/wp-json\/wp\/v2\/comments?post=256"}],"version-history":[{"count":4,"href":"https:\/\/centres.uohyd.ac.in\/casest\/wp-json\/wp\/v2\/pages\/256\/revisions"}],"predecessor-version":[{"id":263,"href":"https:\/\/centres.uohyd.ac.in\/casest\/wp-json\/wp\/v2\/pages\/256\/revisions\/263"}],"wp:attachment":[{"href":"https:\/\/centres.uohyd.ac.in\/casest\/wp-json\/wp\/v2\/media?parent=256"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}