Name of the  Centre :CASEST

Name of the Academic Program  M.Tech (IC Technology)

Course Code:  IC404 Title of the Course: RF/ Microwave ICs

L-T-P: 3-1-0                 Credits: 4

Prerequisite Course / Knowledge (If any):  

The following courses at the B.Tech or M.Sc level. 

  1. Electromagnetic Theory
  2. Advanced Mathematical Methods

                                                                                    Course Outcomes (COs)  

After completion of this course successfully, the students will be able to

CO-1: Analyze the difference between high frequency ICs and conventional ICs and apply transmission line and distributed element based approaches to solve problems with high frequency circuits.  

CO-2: Apply impedance matching   techniques for different circuit conditions and frequency ranges. Use of Smith charts.

CO-3 Evaluate ways to miniaturize the high frequency passives, interconnects and active devices and also by multilayering.

CO-4 Analyze different types of planar transmission lines and their design considerations. 

CO-5 Apply the design approach in planar circuits with filter as an example. (Lumped to distributed conversion).

CO-6  Apply softwares to achieve high frequency circuit design goals along with IC 407 course.

CO-7  Evaluate emerging high frequency miniaturization techniques through a Term Paper.

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

3

1

3

3

2

3

1

2

3

1

3

CO2

3

1

3

1

3

2

1

2

3

1

1

CO3

3

1

3

3

3

1

1

2

3

1

3

CO4

3

1

3

3

3

1

1

2

3

1

3

CO5

3

3

3

3

3

2

1

2

3

1

3

CO6

3

3

3

3

3

2

1

2

3

1

3

CO7

3

3

3

3

3

3

1

2

3

1

3

 

Detailed Syllabus: 

UNIT-1 High Frequency Electronics

Why RF communication?, Unique features of RF communication. Lumped vs. Distributed approach. Why RF circuits are to be treated differently in both active and passive devices? How Miniaturization leads to higher frequency operation? Introduction to high frequency ICs. Challenges and ways to miniaturize a high frequency circuit. Hybrid and integrated approach. High frequency ICs with lumped elements. MIC, MMIC and RFICs. Low frequency vs. High frequency models and parameters. 

UNIT-II Transmission Line Theory, Impedance Transformation and Matching

Review of EM Theory and Transmission lines. Impedance transformation and its effect on microwave circuits. Transmission line sections as circuit elements. Smith chart and admittance chart. Impedance matching techniques for narrow band and broadband operation. Impedance matching using T.line sections, quarter wave lines and lumped elements.

UNIT –III Planar Transmission Lines 

Planar transmission lines that can be miniaturized: Striplines, Microstriplines, Coplanar waveguides. Design and analysis of microstrip and coplanar waveguide circuits. T.Line discontinuities as circuit elements. 

UNIT –IV Materials, Fabrication and Miniaturization

Substrates for transmission lines – dielectrics vs semiconductors. Lumped L,C and R and their models. Parasitics in high frequency circuits and ways to model them. 

Materials used for their realization and their properties: Substrates, conductors, semiconductors, dielectrics and magnetic materials. Micromachining for lumped elements and T.Lines, RF MEMS, Integrated inductors and surface integrated waveguides. 

UNIT –V Microwave Filter Design, Realization and Testing.

Microwave filter design. Filters using transmission line sections. Kuroda’s Identities. Richard’s transformation. Microwave Resonators, Filters using resonators, Varactors and tuning techniques, On wafer probing and on wafer calibration techniques. 

Text Books:

 David M. Pozar, “Microwave Engineering,” 2nd Edition, John Wiley 1998, ISBN 0-471-17096-8.

Peter A. Rizzi, “Microwave Engineering – Passive Circuits”, PHI, ISBN  81-203-1461-1

I.D. Robertson and S.Lucyszyn,  RFIC and MMIC design and technology, , IEE Circuits, Devices and Systems Series 13. ISBN-10 : 0852967861

Related IEEE Journal Papers 

Reference Books: 

K. C. Gupta, Ramesh Garg, Inder Bahl, and Prakash Bhartia, “Microstrip Lines and Slotlines,” Artech House, 2nd edition, 1996, ISBN: 089006766X.

T. C. Edwards and M. B. Steer, “Foundations of Interconnect and Microstrip Design,” John Wiley & Sons, 3rd edition, 2001, ISBN: 0471607010.

Mike Golio (Ed.), The RF and Microwave Handbook, CRC Press. ISBN: 9780849385926. 

Novel technologies for microwave and millimeter-wave applications, Jean-Fu Kiang, Kluwer Academic Publishers. ISBN -10: 1441954015.

Name of the Centre: CASEST

Name of the Academic Program  M.Tech (IC Technology)

 Course Code:  IC405 

Title of the course: Semiconductor Processing, Characterization and Simulation Laboratory

L-T-P:   1-0-5   Credits: 3

Prerequisite Course / Knowledge (If any): Basics of semiconductor devices and methods of fabrication, at BTech level. 

Course Outcomes (COs)  

After completion of this course successfully, the students will be able to

CO-1: Process various materials/layers of a modern semiconductor device, analyze physical behavior and correlate with performance. 

CO-2: Test discrete semiconductor devices using an industry standard method, analyse and interpret results. 

CO-3: Characterize semiconductors for their applications in device fabrication.  

CO-4: Explain the concepts of various device simulation program. 

CO-5: Simulate device and circuit performance: Application, validation and interpretation of results. 

CO-5: Evaluate the performance of various semiconductor devices and Circuits.

CO-6: Communicate the results of all experiments in the form of a written 

             technical report. 

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

PSO5

CO1

2

1

3

1

3

2

0

1

0

3

2

CO2

3

2

3

1

3

2

0

1

0

3

1

CO3

2

1

3

1

3

2

0

1

0

3

2

CO4

3

3

3

2

3

3

0

2

0

3

3

CO5

3

3

3

3

3

3

0

2

0

3

3

CO6

2

3

1

1

1

3

0

0

0

2

2

 Detailed Syllabus:  

  1. Thin film deposition by physical vapour deposition and characterization
  2. Synthesis of novel 2D materials such as graphene
  3. Thermal oxidation of Si
  4. Device characterization using Device Analyser
  5. Estimation of Optical Band gap of a semiconductor
  6. Process Simulation-(ion implantation, diffusion, oxidation)
  7. Device Simulation- (p-n Diode, Schottky diode, MOSFET)

      6.    Circuit Simulation-  (MOSFET based circuits)           

Text books: 

  1. “Semiconductor Material and Device Characterization” by Dieter K. Schroder (Wiley-IEEE Press; 3 edition (2015)
  2. Science and engineering of microelectronic Fabrication by Stephen Campbell Oxford (University Press; Second edition (2012))
  3. VLSI Technology S.M.Sze (McGraw Hill Education; 2 edition (2017)

Name of the Centre: CASEST

Name of the Academic Program  M.Tech (IC Technology)

Course Code:  IC406 Title of the Course:  IC Design Laboratory-1

L-T-P:   0-0-6               Credits: 3

Prerequisite Course / Knowledge (If any): IC402 and IC403 courses 

Course Outcomes (COs)  

After completion of this course successfully, the students will be able to 

CO-1: Design and verify the functionality of   combinational and sequential circuits using Verilog HDL. 

CO2: Implement and carry-out on chip debugging of the digital design on FPGA. 

CO3: Design and simulate the basic analog integrated circuits like CMOS amplifiers and biasing circuits. 

CO4: Design of integrated circuits for target specifications and checking the robustness of the design at different process corners 

CO5: Implement physical design of integrated circuits, DRC and LVS check, post-layout extracted simulation. 

CO6: Communicate the results of the experiment in the form of written technical report.

 

Mapping of Course Outcomes (Cos) with Program Outcomes (Pos)

and Program Specific Outcomes (PSOs)

 

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

2

3

2

2

2

3

2

2

3

2

CO2

2

3

2

2

2

3

2

2

2

2

CO3

2

3

2

2

2

2

3

2

3

2

2

CO4

2

3

2

2

3

2

3

2

3

2

3

CO5

2

2

2

2

3

2

2

2

2

2

3

CO6

3

2

2

3

2

3

2

2

2

2

2

Detailed syllabus:  

List of experiments and mini-projects 

1: Vivado Design Flow2: Synthesizing a RTL Design

3: Implementing the Design

4: Using the IP Catalog and IP Integrator

5: Hardware Debugging

6: Analog and Mixed Signal IC Design Lab Projects

  1. CS and CG amplifiers with different loads, e.g., resistive, diode connected, current source
  2. Current mirrors, e.g., basic current mirror, cascode current mirror
  3. Differential amplifier
  4. Operational Transconductance amplifiers

Name of the  Centre :CASEST

 Name of the Academic Program  M.Tech (IC Technology) 

Course Code:  IC407  Title of the Course: RF/ Microwave IC Laboratory 

L-T-P:   0-0-4               Credits: 2

Prerequisite Course / Knowledge (If any): It is the Lab component of the IC403 RF/Microwave ICs Course. 

Course Outcomes (COs)  

After completion of this course successfully, the students will be able to 

CO-1: Apply microwave measurement techniques using advanced measurement facilities like VNA. 

CO-2: Apply the usage of EDA tools in doing high frequency circuit Design and Simulation. 

CO-3 Apply EDA tools to Design and Simulate passive MIC circuits and active microwave circuits. 

CO-4 Apply EDA tools for doing Full wave simulations by Method of Moments, FEM and FDTD. 

CO-5 Analyze EDA tools to do Fullwave simulation and analysis of layout of high frequency circuits. 

CO-6 Create high frequency circuits using EDA tools and simulate them. 

CO-7 Fabricate the high frequency circuits. 

CO-8 Communicate the results of these experiments in the form of a written technical report.

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

3

2

3

3

3

3

1

2

3

1

3

CO2

3

3

3

3

3

3

1

2

3

1

1

CO3

3

3

3

3

3

3

1

2

3

1

3

CO4

3

3

3

3

3

3

1

2

3

1

3

CO5

3

3

3

3

3

2

1

2

3

1

3

CO6

3

3

3

3

3

3

1

2

3

1

3

CO7

3

3

3

3

3

3

1

2

3

1

3

CO8

3

1

1

3

1

3

1

2

3

1

3

List of experiments/ Mini -projects 

  1. Microwave measurement techniques for devices and circuits with Vector Network Analyzer, Power Meter and On Wafer Probing System.
  2. Tools for high frequency design, Familiarization of EDA tools for RF/ Microwave IC design and simulation, Usage of Models and Libraries for EDA tools, Design Examples (using both active and passive devices).
  3. Fullwave analysis in simulation and analysis of circuit layouts and housings using Method of Moments, FEM and FDTD.
  4. Design and simulation of active and passive microwave integrated circuits using EDA tools.
    • The list of passive circuits includes: Dividers, Filters, Couplers, Tees, Circulators etc
    • The list of active circuits includes : Amplifiers, oscillators, switches, phase shifters, mixers etc
    • Design and Simulation of some of the above circuits/ devices will be done in the classes and remaining to be done as assignments.
  1. Fabrication and characterization of at least one of the above devices (in project mode. Extending to Semester break).

References:

  1. Practical RF Circuit Design for Modern Wireless Systems: Active Circuits and Systems Vol I and II, Les Besser and Rowan Gilmore. Artech House, ISBN-10: 1580535224
  2. RF circuit design, by Christopher Bowick, Elsevier. ISBN-10: 0750685182
  3.  Reading Material provided by the EDA tool used.
  4. 100 ADS Design Examples: Based on the Textbook: RF and Microwave Circuit Design, Ali A. Behagi, ISBN-10: 0996446621, Techno Search.
  5. Related IEEE Papers.

Name of the Centre: CASEST

Name of the Academic Program  M.Tech (IC Technology) 

Course Code:  IC408 Title of the Course: Analog and Mixed Signal IC Design 

L-T-P:   3-1-0               Credits: 4

Prerequisite Course / Knowledge (If any): Nil 

Course Outcomes (COs)  

After completion of this course, the students will be able to

CO 1: Apply the knowledge of different biasing styles for different electronic circuits (Apply level)

CO 2: Design basic building blocks of analog ICs up to layout level.(Apply)

CO 3: Develop a procedure for optimal compensation of op-amp against process, supply and temperature variations (Apply)

CO 4: Identify suitable topologies of the constituent sub-systems and corresponding circuits as per the specifications of the system (Analyze)

CO 5: Design an optimally compensated Op-amp including parasitic effects up to the  tape-out (create level)

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

2

2

1

1

1

3

3

1

1

1

2

CO2

3

3

3

1

3

3

3

2

3

3

2

CO3

1

1

1

3

1

2

3

1

3

3

1

CO4

1

1

3

3

1

3

3

1

3

2

1

CO5

3

1

3

2

1

3

3

2

1

1

1

 Note:   ‘3’ in the box for ‘High-level’ mapping, 2 for ‘Medium-level’ mapping, 1 for ‘Low’-level’ mapping


Detailed Syllabus: 

Course Contents:

Unit-1: MOS Device Structure and Circuit Models, Single-Stage and Differential Amplifiers, Passive and Active Current Mirrors, single- & multi-stage amplifier design

Unit-2: Frequency Response of Amplifiers, Noise, Feedback, Op Amp Design, Stability and Frequency Compensation

Unit-3: Bandgap References, Introduction to Switched-Capacitor Circuits, Analog and Mixed Signal Layout Design Flow

Unit-4: Introduction to Switched Capacitor Circuits, Sampling circuits and architecture Introduction to Data convertors, digital to analog conversion, analog to digital conversion and oversampled converters

 

================================================================

Text books: 

  1. B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, 2001. 

Reference books: 

  1. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, 4th Edition, 2001, Wiley. 
  2. D. A. Johns and K. Martin, Analog Integrated Circuit Design, Wiley, 1997.
  3. Synthesis and optimization of Digital Circuits by G. D. Michelli, Springer.

Name of the Centre :CASEST 

Name of the Academic Program M.Tech (IC Technology) 

Course Code:  IC451: Process , Device and Circuit Modeling and Analysis

L-T-P:   3+1+0             Credits: 4

Prerequisite Course / Knowledge (If any): Nill 

Course Outcomes (COs)  

After completion of this course successfully, the students will be able to 

CO-1: Define  physics involved in modelling of semiconductor device

CO-2: Apply knowledge of mathematics, science, and engineering to design and analysis of modern analog integrated circuits.

CO-3: Compose research/investigation, design and development work to solve problems faced by the industry

CO-4 : Evaluate the True roots using Open method: Newton’s Rapson method, secant method and multiple Newton Rapson method and understand the pitfalls of Gauss Elimination Method

CO-5: Explain the CMOS fabrication, device and process integration using technology computer-aided designed (TCAD) simulation tools.

Mapping of Course Outcomes (COs) with Program Outcomes (POs) and Program Specific Outcomes (PSOs) 

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

PSO5

CO1

3

3

3

0

3

1

0

0

0

3

3

CO2

3

3

3

0

3

1

0

0

0

3

3

CO3

3

3

3

0

3

1

0

0

0

3

3

CO4

3

3

3

0

3

1

0

0

0

3

3

CO5

3

3

3

0

3

1

0

0

0

3

3

Detailed Syllabus: 

Unit I

Process Simulation – Overview of basic FET ad BJT process flows, physical models and simulation techniques for unit process such as etching, thermal oxidation, diffusion, ion implantation and process integration.  

Unit II 

Device Modeling – Overview of basic device structures (BJT, FET and MOSFETs), basic concepts of Carrier transport; drift-diffusion, hydrodynamic, energy balance. Numerical methods, meshing (fixed & adaptive), numerical solutions, common methods (Newton, Gummel etc.), DC & AC simulation, transient simulation, Monte Carlo,  

Unit III 

DC electrical simulation; thermionic current, Fowler Nordheim tunneling, direct tunnel current, damage, interface states, trap assisted tunneling, lattice heating, thermal properties of device, thermal boundaries, Metal & dielectic modeling, RC delays. Future trends in TCAD, 3-D modeling, 

Unit IV

Circuit Simulation –Nodal equations, Linear Equation Solution, Gaussian elimination and LU factorization, Linear dc and transient analysis, Sparse matrix behavior, Nonlinear Equation Solution, Transient Simulation, Convergence

Text & Reference Books:

  1. J.S. Yuan, J.J. Liou, Semiconductor Device Physics and Simulation
  2. S Selberherr, Analysis and Simulation of Semiconductor Devices
  3. T. L. Pillage, R. A. Rohrer, and C. Visweswariah, Electronic Circuit & System Simulation Methods
  4. Silicon VLSI Technology: Fundamentals, Practice, and Modeling, Jim Plummer, Michael D. Deal, and Peter B. Griffin

Name of the  Centre :CASEST

 Name of the Academic Program  M.Tech (IC Technology)

 Course Code:  IC452  Title of the Course: MEMS and THz Technology 

L-T-P:   3-1-0               Credits: 4

Prerequisite Course / Knowledge (If any): B.Tech or M.Sc in an area related to Electronics or Physics. 

Course Outcomes (COs)  

After completion of this course successfully, the students will be able to 

CO-1: Analyze the emergent technologies for MEMS as well as THz technology  and evaluate the need and relevance of these technologies in emerging Communication technologies.  

CO-2: Analyze why micromachining is important for sensors and the issues involved in their design, fabrication and signal transduction. 

CO-3 Evaluate the Bulk and Surface micromachining technologies and applicability of   Micromachining in the high frequency Electronics.

CO-4 Explain the THz frequency range,  the difficulties in using this part of the spectrum  and the solutions available as well as emerging,   to overcome these difficulties. 

CO-5 Apply the technologies, devices and circuits using semiconductors that are available or emerging  to realize communication in THz range of frequencies. 

CO-6 Evaluate the importance of  MEMS and THz technologies in emerging security and communication technologies.   

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

3

2

3

3

3

1

1

2

3

1

3

CO2

3

2

3

3

3

2

1

2

3

1

1

CO3

3

2

3

3

3

1

1

2

3

1

3

CO4

3

2

3

3

3

2

1

2

3

1

3

CO5

3

2

3

3

3

2

1

2

3

1

3

CO6

3

3

3

3

3

3

1

2

3

1

3

 Detailed Syllabus

 Unit -1

Micromachining vs. Microelectronics, Micromachining and Electronics. Microsystems, Scaling laws

Unit -II

MEMS and Sensors, Silicon and other substrates for MEMS. Micromachining processes.

Signal transduction methods, MEMS IN RF Electronics. MEMS Design and packaging.

Unit- III

THz range of em spectrum. Atmospheric propagation characteristics of THz radiation.

Why THz in Electronics? Active devices for THz operation. Passive devices for THz operation.

Materials for THz technology.

Unit- IV

Surface Integrated Waveguides and micromachined components for THz operation.  THz circuits for communication. THz for security applications. Design and simulation of THz circuits.

Unit –V  Assignment: What is the circuitry required to use a particular commercial MEMS device in an application?

References:

 1. Microsystem Design by Stephen D Seturia, Springer, ISBN-10 : 9788181285461

2. MEMS & Microsystems design and Manufacture, Tai-Ran Hsu, McGraw Hill Education,             ISBN 10- 007048709X

3. Semiconductor Terahertz technology: Devices and Systems at Room Temperature Operation. By Guillermo Carpintero et.al, IEEE Press., ISBN -13: 978-1118920428

Related IEEE Journal Papers

Name of the  Centre :CASEST 

Name of the Academic Program  M.Tech (IC Technology) 

Course Code:  IC453 Title of the CourseDigital IC Design 

L-T-P:   3-1-0               Credits: 4

Prerequisite Course / Knowledge (If any): Nil 

Course Outcomes (COs)  

After completion of this course, the students will be able to

CO1 Design CMOS inverters with specified noise margin and propagation delay.

CO2 Implement efficient techniques at circuit level for improving power and speed of digital circuits

CO3 Identify sources of power consumption in a given VLSI Circuit

CO4 Estimate dynamic and leakage power components in a DSM VLSI circuit 

CO5 Analyze the dynamic and leakage power components in a DSM VLSI circuit 

CO6 Estimate power consumption at different levels of abstraction in a VLSI system. 

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

3

3

2

3

1

3

3

3

3

3

2

CO2

2

3

1

2

3

3

3

3

2

3

1

CO3

3

3

1

3

3

2

3

2

3

3

1

CO4

3

3

2

3

2

3

3

3

3

3

2

CO5

3

3

1

2

3

3

3

2

1

1

1

C06

1

3

3

2

3

2

3

2

3

3

1

 

Note:   ‘3’ in the box for ‘High-level’mapping, 2 for ‘Medium-level’mapping, 1 for ‘Low’-level’mapping

 

 

  

Detailed Syllabus:Unit-1: INTRODUCTION: A Historical Perspective; Issues in Digital Integrated Circuit Design; Quality Metrics of a Digital Design; Cost of an Integrated Circuit; Functionality and Robustness; Performance; Power and Energy Consumption; A Word on Process Variations; Perspective: Technology Scaling, More than Moore, New Technologies like: FDSOI, FINFET, 3D IC’s. etc., Interconnect Parameters — Capacitance, Resistance, and Inductance; Electrical Wire Models; The Ideal Wire; The Lumped Model; The Lumped RC model; The Distributed rc Line; The Transmission Line; SPICE Wire Models; Distributed rc Lines in SPICE; Transmission Line Models in SPICE.

Unit-2: THE CMOS INVERTER: The Static CMOS Inverter — An Intuitive Perspective; Evaluating the Robustness of the CMOS Inverter: The Static Behaviour;  Switching Threshold; Noise Margins; Robustness Revisited; Performance of CMOS Inverter: The Dynamic Behaviour; Computing the Capacitances; Propagation Delay: First-Order Analysis; Propagation Delay from a Design Perspective; Power, Energy, and Energy-Delay; Dynamic Power Consumption; Static Consumption; Putting It All Together; Analysing Power Consumption; Technology Scaling and its Impact on the Inverter Metrics.

Unit-3 DESIGNING COMBINATIONAL AND SEQUENTIAL CIRCUITS: Static CMOS Design; Complementary CMOS; Ratioed Logic;  Pass-Transistor Logic; Dynamic CMOS Design; How to Choose a Logic Style; Designing Logic for Reduced Supply Voltages.  Timing Metrics for Sequential Circuits; Classification of Memory Elements; Static Latches and Registers; The Bistability Principle; Multiplexer-Based Latches; Master-Slave Edge-Triggered Register; Low-Voltage Static Latches; Static SR Flip-Flops—Writing Data by Pure Force;  Dynamic Latches and Registers; Dynamic Transmission-Gate Edge-triggered Registers; C2MOS—A Clock-Skew Insensitive Approach ; True Single-Phase Clocked Register (TSPCR). 

Unit-4 TIMING ISSUES IN DIGITAL CIRCUITS: Timing Classification of Digital Systems; Synchronous Interconnect; Mesochronous interconnect; Plesiochronous Interconnect; Asynchronous Interconnect; Synchronous Design — An In-depth Perspective; Synchronous Timing Basics; Sources of Skew and Jitter; Clock-Distribution Techniques. Latch-Based Clocking, Clocking in IC’s: Basic Concepts PLL and DLL; Building Blocks of a PLL; Future Directions and Perspectives; Distributed Clocking Using DLLs; Synchronous versus Asynchronous Design.

Text Books:

Jan Rabaey, AnanthaChandrakasan, and Borivoje Nikolic, Digital Integrated Circuits: A Design Perspective, 2nd edition, Prentice Hall, 2003.

Reference Books:

N. Weste and D. Harris, CMOS VLSI Design: A Circuits and Systems Perspective, 3rd edition, Addison-Wesley, 2005.

D.A. Hodges, H.G. Jackson, and R.A. Saleh, Analysis and Design of Digital Integrated Circuits in Deep Submicron Technology, 3rd edition, McGraw Hill, 2004.

Name of the  Centre :CASEST 

Name of the Academic Program  M.Tech (IC Technology) 

Course Code:  IC454 Title of the Course: VLSI Signal processing 

L-T-P:   3-1-0               Credits: 4

Prerequisite Course / Knowledge : IC403 course 

Course Outcomes (COs)  

After completion of this course successfully, the students will be able to 

CO-1: Explain  the methodologies to design custom or semicustom VLSI circuits of  DSP algorithms. 

CO-2: Apply   speed/area/power optimized architectural techniques to DSP algorithms.

CO-3 Analyze the role of different architectural techniques on target performance indicators

CO-4 Design a DSP system using FPGA

CO-5 Create new architecture for different DSP units/subunits 

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

2

2

2

1

1

1

3

2

 

 

1

CO2

3

2

3

2

2

1

3

2

 

 

1

CO3

3

2

3

1

2

2

3

1

 

 

2

CO4

3

2

2

2

2

1

3

1

 

 

2

CO5

3

2

3

3

3

2

3

1

 

 

2

 Note: ‘3’ in the box for ‘High-level’mapping, 2 for ‘Medium-level’mapping, 1 for ‘Low’-level’mapping 

Detailed syllabus 

Unit-1

DSP Algorithm Design – DSP Representation (Data-flow, Control-flow, Signal-flow graphs and block diagrams), filter structures, Iteration bound, Longest Path Matrix algorithm, 

Unit-II

Circuit and Architecture Design – Hardware design of real and complex multiplication and addition.  Pipelining, parallel processing, Retiming

Unit III: Unfolding, Folding, Systolic architecture design, Fast Convolution algorithms

Unit- IV: Algorithm strength reduction in Filters, Bit level arithmetic architectures: bit-parallel, bit-serial Multiplier, Distributed arithmetic architecture,  

Unit-V: Speed/area optimized architecture for matrix multiplication, matrix inversion, CORDIC architecture, Speed/area optimized architecture of  FFT, redundant number systems, scaling and round off noise,  Case study- 1:  FPGA of implementation of artificial neural network, case study -2: FPGA implementation of Orthogonal matching Pursuit algorithm, 

Books recommended: 

  1. K.K. Parhi – VLSI Digital Signal Processing Systems – Design and Implementation, Wiley publication (2015 reprint)
  2. Roger Woods, John McAllister, Gaye Lightbody, Ying Yi, FPGA-based implementation of Signal Processing systems, Wiley publication (2008)

 References:

  • Pramod Kumar Meher, On Efficient Retiming Of Fixed-Point Circuits, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 24, NO. 4, APRIL 2016
  • Supriya Aggarwal, Pramod K. Meher, And Kavita Khare Concept, Design, And Implementation Of Reconfigurable CORDIC , IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 24, NO. 4, APRIL 2016
  • Lakshmi, B. And Dhar, A. S.CORDIC Architectures: A Survey, VLSI Design, Hindwai,  Volume 2010 , Article ID 794891 
  • IEEE papers related to VLSI signal processing

 

Name of the Centre: CASEST 

Name of the Academic Program  M.Tech (IC Technology) 

Course Code:  IC455 : Title of the course:  IC Fabrication Technology Laboratory

L-T-P:   1-0-7               Credits: 4

Prerequisite Course / Knowledge (If any): Nil 

Course Outcomes (COs)  

After completion of this course successfully, the students will be able to 

CO-1: Gain hands on experience and skills in Micro-electronic device processing and clean-room practices involved in Integrated Circuit fabrication industry.

CO-2: Analyze the process protocols/steps followed in IC fabrication technology. 

CO-3: Analyze the physical reasons that are limiting the current fabrication technology and Propose new procedures to overcome these limits. 

CO-4: Fabricate and test GaAs based Schottky Diode and MESFET structures. 

CO-5: Fabricate and test Si based Schottky Diode and MOS Capacitor. 

CO-6: Discuss the role of processing in device functionalities and propose new / alternate device structures / parameters / processes.

CO-7: Communicate the results of all experiments in the form of a written technical report.  

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

PSO5

CO1

3

1

1

2

1

1

0

1

0

3

0

CO2

3

1

3

2

2

1

0

1

0

3

1

CO3

3

2

3

3

3

2

0

1

0

3

3

CO4

3

3

3

3

3

3

0

2

0

3

3

CO5

3

3

3

3

3

3

0

2

0

3

3

CO6

3

3

3

3

3

3

0

2

0

3

3

CO7

2

3

1

1

1

3

0

0

0

2

2

 

Detailed Syllabus: 

1. Layout Design, Use of design rules, layout design of 1 CMOS circuit

2. Processing introduction: Substrate/wafer scribing/cleaving, Substrate/wafer wafer cleaning, spin-coating, lithography, etch and lift-off process for obtaining patterned deposited layers

3. GaAs processing and lithography: Process steps for GaAs (implanted/multilayer wafer) to pattern for carrier concentration, mobility measurements and optionally FET.

4. Thin film deposition by sputtering, evaporation and spin coating

5. Fabrication of Ohmic contacts, Schottky Diode and MOS Capacitor.  

6. Testing.       

Text books: 

  1.  “Semiconductor Material and Device Characterization” by Dieter K. Schroder (Wiley-IEEE Press; 3 edition (2015))
  1. “The Science and Engineering of Microelectronic Fabrication” by Stephen A Campbell (Oxford University Press; Second edition (2012))
  2. “VLSI Technology” by S.M. Sze (McGraw Hill Education; 2 edition (2017))

Name of the  Centre :CASEST 

Name of the Academic Program  M.Tech (IC Technology) 

Course Code:  IC456  Title of the Course: MEMS Technology Laboratory

L-T-P:   0-0-4               Credits: 2

Prerequisite Course / Knowledge (If any): IC 452 MEMS and THz course (Theory).

 Course Outcomes (COs) 

 After completion of this course successfully, the students will be able to

CO-1:  Apply EDA tools working with Finite Element Method and the concept of Multiphysics and the conditions and constraints under which these techniques work.

CO-2 : Apply EDA tools to create  3D structures that function as MEMS or Surface Integrated Waveguide devices. 

CO-3 : Create MEMS devices using EDA tools suitable for sensing and communication applications and simulate them under the influence of different stimuli using Multiphysics techniques.

CO-4 :  Create MEMS structures suitable for RF and THz range applications.  

CO-5 : Create RF or Sensor device by SIW technology (Fabricate it after simulation and test them experimentally with connectorization). 

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

PSO5

CO1

3

3

3

3

3

2

1

2

3

1

3

CO2

3

3

3

3

3

2

1

2

3

1

3

CO3

3

3

3

3

3

2

1

2

3

1

3

CO4

3

3

3

3

3

3

1

2

3

1

3

CO5

3

3

3

3

3

3

1

2

3

1

3

 

Detailed syllabus: 

Lab Experiments 

  1. EDA tools for MEMS design and simulation, Familiarization of EDA tools. Modeling, material attributes, meshing and elements, choice of solvers, loads and load steps, post processing.
  2. Coupled field simulation using Multiphysics, 3D structure drawing in EDA tools, Design Examples.
  3. Simulation of a cantilever structure – Model, Harmonic and Transient analysis, Cantilever based chemical sensor design – by mass sensing route, Cantilever based RF switch, Membrane based RF switch, Membrane based piezoresistive  pressure sensor, Interdigitated  structure based MEMS devices and Otical micromirror. Any other examples suggested by the instructer.
  4. Design and simulate SIW based structures suitable for RF or sensing applications. It’s fabrication using composite polymer substrates and testing after connectorization.   
  5. Design and simulation of MEMS based sensors or RF / THz devices and presentation of the results as a project report.  

References:

  1. Materials provided by the EDA tool: Offline and online.
  2. MEMS: A Practical Guide of Design, Analysis, and Applications: by Jan KorvinkOliver Paul, Springer, ISBN-13: 978-3662568354

 

Name of the  Centre :CASEST 

Name of the Academic Program  M.Tech (IC Technology) 

Course Code:  IC457 Title of the Course:  IC Design Laboratory-1I

L-T-P:   0-0-8               Credits: 4

Prerequisite Course / Knowledge (If any): IC402 and IC403

 

Course Outcomes (COs)  

After completion of this course successfully, the students will be able to 

CO-1: Understand the fixed point accuracy vs bitlength, Understand pipelining in detail. 

CO2: Design and implement DSP on  FPGA  

CO3: Design and a System on Chip using FPGA 

CO4:  Implement CMOS Inverters, logic gates in full-custom IC design flow. 

CO5: Estimate power consumption and propagation delay by pre-layout and post-layout simulations 

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

2

3

2

2

2

3

2

3

2

3

CO2

2

3

2

2

2

3

3

2

2

3

CO3

3

2

2

3

2

3

2

3

2

3

2

CO4

3

2

2

3

2

2

3

3

2

2

3

CO5

3

2

2

3

2

2

3

3

2

2

3


D
etailed syllabus: 

List of Experiments and Mini-projects:

1: FIR filter design using MATLAB

2:  Fixed point simulation in MATLAB

3: Design and synthesis of FIR filter

4: CIC filter and pipelining Design and synthesis of FIR filter

5: Adding Peripherals in Programmable Logic

6: Creating and Adding Custom IP

7: Debugging using Vivado Logic Analyzer cores

8: CMOS Logic gates design

9: Estimation of power consumption and propagation delay of CMOS circuits. 

Name of the Centre: CASEST 

Name of the Academic Program M.Tech (IC Technology) 

Course Code:  IC458 Title of the Course:   Project work+seminar+Dissertation+viva

L-T-P:              Credits: 48

Prerequisite Course / Knowledge (If any): First two semester course works

 Course Outcomes (COs) 

 After completion of the first two semester course work each student will do a two semester project in any area related to their study. After the completion of the one semester of the project work, the students will be able to  

CO-1:   Carryout literature survey in the field of study 

CO2:  Define the problem. 

CO3: Formulate the objectives and hypothesis. 

CO4:  Communicate in the form of technical seminar 

After the completion of the second semester of the project work, the students will be able to 

CO5: Execute the experimental study in order to achieve the defined objectives 

CO6: Implement the objective 

CO7: Analyse and interpret the results 

CO8: Communicate the results of the entire study in the form of technical  

Mapping of Course Outcomes (COs) with Program Outcomes (POs)

and Program Specific Outcomes (PSOs)

 

PO1

PO2

PO3

PO4

PO5

PO6

PSO1

PSO2

PSO3

PSO4

 

PSO5

CO1

1

1

1

 

1

 

 

 

 

 

2

CO2

2

1

3

 

2

 

 

 

 

 

2

CO3

3

1

3

 

3

 

 

 

 

 

2

CO4

1

3

1

 

3

3

 

 

 

 

2`

CO5

3

1

1

 

3

 

 

 

 

 

2

CO6

3

1

2

 

3

 

 

 

 

 

2

CO7

3

1

3

 

3

 

 

 

 

 

2

CO8

1

3

1

1

2

3

 

 

 

 

2